| Budget Amount *help |
¥25,350,000 (Direct Cost: ¥19,500,000、Indirect Cost: ¥5,850,000)
Fiscal Year 2011: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2010: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2009: ¥17,160,000 (Direct Cost: ¥13,200,000、Indirect Cost: ¥3,960,000)
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| Research Abstract |
In this study, we proceed following the establishment of fundamental technology for nitride based semiconductor emitters
(1) Technology for fabrication of GaInN based LED with wavelength region from violet to red.
(2) Moth-eye technology
(3) Laser lift off process
(4) Ag-Pd-Cu alloys high reflective contact
(5) Transparent contact
(6) DBR
(7) High hole concentration p-type GaInN
In addition, we have advanced the realization of a new device by applying these techniques.
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