Defect control in p-type oxide semiconductor for device application
| Project/Area Number |
21686061
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | University of Yamanashi |
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Principal Investigator |
YANAGI Hiroshi 山梨大学, 大学院・医学工学総合研究部, 准教授 (30361794)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥28,080,000 (Direct Cost: ¥21,600,000、Indirect Cost: ¥6,480,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2010: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2009: ¥24,310,000 (Direct Cost: ¥18,700,000、Indirect Cost: ¥5,610,000)
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| Keywords | p型酸化物半導体 / 価数制御 / 界面制御 / 光電子分光 |
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| Research Abstract |
Cu valency at the Cu_2O film surface and Cu_2O/Al_2O_x interface were studied by X-ray photoelectron spectroscopy. We revealed that Cu valency at the interfaces is always Cu^<2+> and this result was not affected by deposition order. We also revealed that vacuum annealing was effective to reduce Cu^<2+> to Cu^+at the interface, but it does not work when thick film was deposited on the interface.
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Report
(4 results)
Research Products
(25 results)
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[Presentation] Cu_<2-x> Se : High-efficienthole injection electrode for organic semiconductors2009
Author(s)
Hiroshi Yanagi, Ikue Koizumi, Ki-Beom Kim, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono
Organizer
The Third International Conference on the Characterization and Control of Interfaces for High Quality Advanced Materials, and Joining Technology for New Metallic Glasses and Inorganic Materials
Place of Presentation
Kurashiki, Japan
Year and Date
2009-09-09
Related Report
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