Fabrication of Organic Electronic Devices by Interfacial Self-organization
Project/Area Number |
21710092
|
Research Category |
Grant-in-Aid for Young Scientists (B)
|
Allocation Type | Single-year Grants |
Research Field |
Nanostructural science
|
Research Institution | The University of Tokyo |
Principal Investigator |
TAJIMA Keisuke The University of Tokyo, 大学院・工学系研究科, 講師 (90376484)
|
Project Period (FY) |
2009 – 2010
|
Project Status |
Completed (Fiscal Year 2010)
|
Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2009: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
|
Keywords | 表面 / 界面ナノ構造 / 有機電子デバイス / 有機太陽電池 / 界面構造 / 電子材料 / 表面偏析 / 有機トランジスター / 多層膜 / 移動度 |
Research Abstract |
In this study, we utilized a new film transfer method to fabricate organic field effect transistors. Self-organized surface structure during the spin-coating could be placed at the charge transport interface without changing the structures. As the result, the charge mobility and device stability toward the bias stress were improved due to the ordered interfacial structure. Moreover, this technique was used to investigate the charge distribution in the thin films in organic field effect transistor devices, which had a fundamental importance.
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Report
(3 results)
Research Products
(34 results)