Control of spin properties at nitride-semiconductor interfaces

• Project/Area Number: 21710102
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Nanomaterials/Nanobioscience
• Research Institution: The University of Tokyo
• Principal Investigator: GOHDA Yoshihiro 東京大学, 大学院・理学系研究科, 助教 (50506730)
• Project Period (FY): 2009 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
• Keywords: ナノ表面・界面 / ナノ材料 / 磁性 / 物性理論 / ナノ界面 / 表面・界面物性 / 格子欠陥 / 第一原理計算

Research Abstract

Theoretical investigations on magnetism based on first-principles calculations were conducted for interfaces between nitride-semiconductors such as GaN and non-magnetic materials. Prediction of interface ferromagnetism for AlN/MgB2 and its spin-transport properties were published in Physical Review Letters. In addition, findings on spin properties of GaN/graphene interfaces were disclosed in Applied Physics Letters.

Research Products

• [Journal Article] Structural phase transition of graphene caused by GaN epitaxy (2012)
  • Author(s): Y. Gohda and S. Tsuneyuki
  • Journal Title: Appl. Phys. Lett Volume: 100 Issue: 5 Pages: 53111-53111
  • DOI: 10.1063/1.3680100
  • Peer Reviewed
• [Journal Article] Optical conductivity of highly mismatched GaP alloys (2012)
  • Author(s): 合田 義弘、常行 真司
  • Journal Title: Appl. Phy. Lett. Volume: 102 Issue: 2
  • DOI: 10.1063/1.4773526
  • Peer Reviewed
• [Journal Article] First-principles calculations on spin polarization of vacancies in nitride semiconductors (2012)
  • Author(s): Y.Gohda, A.Oshiyama
  • Journal Title: AIP Conf.Proc. Volume: 1399 Pages: 83-84
  • DOI: 10.1063/1.3666268
  • Peer Reviewed
• [Journal Article] 磁性元素が関与しない磁性?界面・点欠陥の役割を予測 (2012)
  • Author(s): 合田義弘、押山淳、常行真司
  • Journal Title: 日本物理学会誌 Volume: 66 Pages: 836-840
  • Peer Reviewed
• [Journal Article] Tsuneyuki, Two-dimensional intrinsic ferromagnetism at nitride-boride interfaces (2011)
  • Author(s): Y. Gohda and S
  • Journal Title: Phys. Rev.Lett Volume: 106 Issue: 4 Pages: 47201-47201
  • DOI: 10.1103/physrevlett.106.047201
  • Peer Reviewed
• [Journal Article] Two-dimensional intrinsic ferromagnetism at nitride-boride interfaces (2011)
  • Author(s): Y.Gohda, S.Tsuneyuki
  • Journal Title: Phys.Rev.Lett. Volume: 106
  • Peer Reviewed
• [Journal Article] First-principles calculations on spin polarization of vacancies in nitride semiconductors (2011)
  • Author(s): Y.Gohda, A.Oshiyama
  • Journal Title: AIP Conf.Proc. Volume: (印刷中)
  • Peer Reviewed
• [Journal Article] Stabilization Mechanism of Vacancies in Group-III Nitrides : Exchange Splitting and Electron Transfer (2010)
  • Author(s): Y.Gohda, A.Oshiyama
  • Journal Title: J.Phys.Soc.Jpn. Volume: 79
  • Peer Reviewed
• [Presentation] Optical conductivity of GaP alloys studied by hybrid-density functional theory (2013)
  • Author(s): 合田 義弘、常行 真司
  • Organizer: 2013 APS March Meeting
  • Place of Presentation: Baltimore, USA
• [Presentation] Computational design of nano/energy materials from first principles (2013)
  • Author(s): 合田 義弘
  • Organizer: The Yonsei-Todai Joint Workshop 2013
  • Place of Presentation: 東京大学 (東京都)
• [Presentation] 焼結永久磁石材料の異相界面 (2013)
  • Author(s): 合田 義弘
  • Organizer: 第3回大阪大学産業科学研究所共同研究研究会
  • Place of Presentation: メープル有馬 (兵庫県)
  • Invited
• [Presentation] Ab-InitioIdentification of a New Structure ofGraphene Induced by GaN Epitaxy (2012)
  • Author(s): Y. Gohda and S. Tsuneyuki
  • Organizer: 2012 MRS Fall Meeting
  • Place of Presentation: Boston, USA
  • Year and Date: 2012-11-27
• [Presentation] 非磁性元素界面における磁性の可能性 (2012)
  • Author(s): 合田義弘、常行真司
  • Organizer: 日本物理学会2011年秋季大会
  • Place of Presentation: 富山大学(富山市)
  • Year and Date: 2012-09-23
• [Presentation] Structural phase transition of graphene caused by GaN epitaxy predicted by ab-initiocalculations (2012)
  • Author(s): Y. Gohda and S. Tsuneyuki
  • Organizer: Graphene Nanoscience: from Dirac Physics to Applications
  • Place of Presentation: Granada, Spain.
  • Year and Date: 2012-09-12
• [Presentation] First-principles interface science: structures and electronic states (2012)
  • Author(s): Y. Gohda
  • Organizer: Material simulation in petaflops era (MASP2012)
  • Place of Presentation: 東京大学物性研究所(千葉県)(招待講演)
  • Year and Date: 2012-07-12
• [Presentation] First-principles predictions of graphene structure governed by GaN epitaxy (2012)
  • Author(s): Y. Gohda and S. Tsuneyuki
  • Organizer: International Conference on Solid Films and Surfaces (ICSFS16)
  • Place of Presentation: Genova, Italy.
  • Year and Date: 2012-07-02
• [Presentation] First-principles predictions on properties of nano/energy materials (2012)
  • Author(s): Y. Gohda
  • Organizer: Collaborative Conference on Materials Research (CCMR2012)
  • Place of Presentation: Seoul, Korea(招待講演)
  • Year and Date: 2012-06-27
• [Presentation] 第一原理計算による希薄窒化物GaNPの光学伝導度 (2012)
  • Author(s): 合田義弘、常行真司
  • Organizer: 日本物理学会第67回年次大会
  • Place of Presentation: 関西学院大学(西宮市)
  • Year and Date: 2012-03-26
• [Presentation] 窒化物半導体との界面におけるグラフェンの構造相転移 (2012)
  • Author(s): 合田義弘、常行真司
  • Organizer: 文科省科研費新学術領域「コンピューティクスによる物質デザイン:複合相関と非平衡ダイナミクス」平成24年度研究会
  • Place of Presentation: 東京大学(文京区)
  • Year and Date: 2012-03-17
• [Presentation] 窒化物半導体成長によるグラフェンの構造相転移 (2012)
  • Author(s): 合田義弘、常行真司
  • Organizer: 次世代ナノ統合シミュレーションソフトウェアの研究開発第6回公開シンポジウム
  • Place of Presentation: ニチイ学館(神戸市)
  • Year and Date: 2012-03-06
• [Presentation] 窒化ガリウムのエピタキシャル成長に伴うグラフェンの圧力誘起構造相転移 (2012)
  • Author(s): 合田義弘、常行真司
  • Organizer: 計算科学の課題と展望
  • Place of Presentation: 東京大学(文京区)
  • Year and Date: 2012-02-20
• [Presentation] 窒化物半導体界面の構造と磁性 (2012)
  • Author(s): 合田義弘、常行真司
  • Organizer: 超低速ミュオン顕微鏡が拓く物質・生命・素粒子科学のフロンティア第1回領域会議
  • Place of Presentation: ホテル春日居(笛吹市)
  • Year and Date: 2012-01-09
• [Presentation] First-principles interface science: structures and electronic states (2012)
  • Author(s): 合田 義弘
  • Organizer: Material simulation in petaflops era (MASP2012)
  • Place of Presentation: 東京大学物性研究所 (千葉県)
  • Invited
• [Presentation] First-principles predictions on properties of nano/energy materials (2012)
  • Author(s): 合田 義弘
  • Organizer: Collaborative Conference on Materials Research (CCMR2012)
  • Place of Presentation: Seoul, Korea
  • Invited
• [Presentation] Ab-Initio Identification of a New Structure of Graphene Induced by GaN Epitaxy (2012)
  • Author(s): 合田 義弘、常行 真司
  • Organizer: 2012 MRS Fall Meeting
  • Place of Presentation: Boston, USA
• [Presentation] New phase of graphene at interfaces with GaN (2012)
  • Author(s): 合田 義弘、常行 真司
  • Organizer: International Symposium on Computics: Quantum Simulations and Design (ISC-QSD)
  • Place of Presentation: 大阪大学 (大阪府)
• [Presentation] Structural phase transition of graphene caused by GaN epitaxy predicted by ab-initio calculations (2012)
  • Author(s): 合田 義弘、常行 真司
  • Organizer: Graphene Nanoscience: from Dirac Physics to Applications
  • Place of Presentation: Granada, Spain
• [Presentation] First-principles predictions of graphene structure governed by GaN epitaxy (2012)
  • Author(s): 合田 義弘、常行 真司
  • Organizer: International Conference on Solid Films and Surfaces (ICSFS16)
  • Place of Presentation: Genova, Italy
• [Presentation] GaN結晶成長に伴うグラフェンの構造相転移 (2012)
  • Author(s): 合田 義弘、常行 真司
  • Organizer: 日本物理学会2012年秋季大会
  • Place of Presentation: 横浜国立大学 (神奈川県)
• [Presentation] 窒化物界面における遍歴強磁性の第一原理計算 (2011)
  • Author(s): 合田義弘、常行真司
  • Organizer: 日本金属学会2011年度秋季大会
  • Place of Presentation: 沖縄コンベンションセンター(宜野湾市)
  • Year and Date: 2011-11-08
• [Presentation] Structure and electronic properties of nitride interfaces (2011)
  • Author(s): Y.Gohda, S.Tsuneyuki
  • Organizer: The 14th Asian Workshop on First-Principles Electronic Structure Calculations (ASIAN14)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-11-01
• [Presentation] Magnetism at interfaces consisting of nonmagnetic (2011)
  • Author(s): Y. Gohda and S. Tsuneyuki
  • Organizer: International Focus Workshop on Quantum Simulations and Design (QSD2011)
  • Place of Presentation: Dresden, Germany.
  • Year and Date: 2011-09-27
• [Presentation] Magnetism at interfaces consisting of nonmagnetic materials (2011)
  • Author(s): Y.Gohda, S.Tsuneyuki
  • Organizer: International Focus Workshop on Quantum Simulations and Design (QSD2011)
  • Place of Presentation: Dresden, Germany
  • Year and Date: 2011-09-27
• [Presentation] 非磁性元素界面における磁性の可能性 (2011)
  • Author(s): 合田義弘、常行真司
  • Organizer: 日本物理学会2011年秋季大会
  • Place of Presentation: 富山大学(富山県)
  • Year and Date: 2011-09-23
• [Presentation] Possibility of two-dimensional ferromagnetism at nitride-boride interfaces (2011)
  • Author(s): Y. Gohda and S. Tsuneyuki
  • Organizer: The 13th International Conference on the Formation of Semiconductor Interfaces (ICFSI-13)
  • Place of Presentation: Praha, Czech Republic.
  • Year and Date: 2011-07-05
• [Presentation] Possibility of two-dimensional ferromagnetism at nitride-boride interfaces (2011)
  • Author(s): Y.Gohda, S.Tsuneyuki
  • Organizer: The 13th International Conference on the Formation of Semiconductor Interfaces (ICFSI-13)
  • Place of Presentation: Praha, Czech Republic
  • Year and Date: 2011-07-05
• [Presentation] 第一原理計算による窒化物/ホウ化物界面のスピン物性 (2011)
  • Author(s): 合田義弘、常行真司
  • Organizer: 日本物理学会第66回年次大会
  • Place of Presentation: 新潟大学
  • Year and Date: 2011-03-28
• [Presentation] Intrinsic ferromagnetism at AlN-MgB2 interfaces (2011)
  • Author(s): Y. Gohda and S. Tsuneyuki
  • Organizer: 2011 APS March Meeting
  • Place of Presentation: Dallas, USA.
  • Year and Date: 2011-03-22
• [Presentation] Intrinsic ferromagnetism at AlN-MgB2 interfaces (2011)
  • Author(s): Y.Gohda, S.Tsuneyuki
  • Organizer: 2011 APS March Meeting
  • Place of Presentation: Dallas, USA
  • Year and Date: 2011-03-22
• [Presentation] 窒化物/ホウ化物界面のスピン物性の第一原理計算 (2011)
  • Author(s): 合田義弘、常行真司
  • Organizer: 次世代ナノ統合シミュレーションソフトウェアの研究開発第5回公開シンポジウム
  • Place of Presentation: 甲南大学
  • Year and Date: 2011-02-23
• [Presentation] First-principles calculations on spin polarization of vacancies in nitride semiconductors (2010)
  • Author(s): Y.Gohda, A.Oshiyama
  • Organizer: 30th International Conference on the Physics of Semiconductors (ICPS-30)
  • Place of Presentation: Seoul, Korea
  • Year and Date: 2010-10-26
• [Presentation] Interface atomic structures and electronic properties of group-III nitrides (2010)
  • Author(s): Y. Gohda and S. Tsuneyuki
  • Organizer: Psi-k Conference 2010
  • Place of Presentation: Berlin, Germany.
  • Year and Date: 2010-09-13
• [Presentation] Interface atomic structures and electronic properties of group-III nitrides (2010)
  • Author(s): Y.Gohda, S.Tsuneyuki
  • Organizer: Psi-k Conference 2010
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2010-09-13
• [Presentation] First-principles calculations on metal-induced gap states at metal-semiconductor interfaces (2010)
  • Author(s): Y. Gohda and S. Tsuneyuki
  • Organizer: 2010 APS March Meeting
  • Place of Presentation: Portland, USA.
  • Year and Date: 2010-03-18
• [Presentation] First-principles calculations on metal-inducedgap states at metal-semiconductor interfaces (2010)
  • Author(s): 合田義弘
  • Organizer: 2010 APS March Meeting
  • Place of Presentation: Portland, USA
  • Year and Date: 2010-03-18
• [Presentation] 窒化物半導体/ホウ素化合物界面の第一原理計算 (2009)
  • Author(s): 合田義弘
  • Organizer: 日本物理学会2009年秋季大会
  • Place of Presentation: 熊本大学(熊本市)
  • Year and Date: 2009-09-25
• [Presentation] Structural bistability and spin polarization of multi-vacancies in GaN identified by first-principles calculations (2009)
  • Author(s): Y. Gohda and A. Oshiyama
  • Organizer: 25th International Conference on Defects in Semiconductors
  • Place of Presentation: Sankt-Peterburg, Russia.
  • Year and Date: 2009-07-20
• [Presentation] Structural bistability and spin polarization of multi-vacancies in GaN identified by first-principles calculations (2009)
  • Author(s): 合田義弘
  • Organizer: 25th International Conference on Defects in Semiconductors
  • Place of Presentation: Sankt-Peterburg, Russia
  • Year and Date: 2009-07-20
• [Book] シミュレーション辞典・項目「GaN 中不純物のシミュレーション」 (2012)
  • Author(s): 合田 義弘(分担執筆)
  • Publisher: コロナ社
• [Book] シミュレーション辞典、項目「GaN中不純物のシミュレーション」 (2012)
  • Author(s): 合田義弘(分担執筆)
  • Total Pages: 1
  • Publisher: コロナ社
• [Book] シミュレーション辞典、項目(「GaN中不純物のシミュレーション」) (2011)
  • Author(s): 合田義弘
  • Total Pages: 1
  • Publisher: コロナ社(印刷中)
• [Remarks] <受賞>Y.Gohda : The J.W.Corbett Prize for the Best Paper Presented by a Young Scientist at the 25th International Conference on Defects in Semiconductors