Control of spin properties at nitride-semiconductor interfaces
Project/Area Number |
21710102
|
Research Category |
Grant-in-Aid for Young Scientists (B)
|
Allocation Type | Single-year Grants |
Research Field |
Nanomaterials/Nanobioscience
|
Research Institution | The University of Tokyo |
Principal Investigator |
GOHDA Yoshihiro 東京大学, 大学院・理学系研究科, 助教 (50506730)
|
Project Period (FY) |
2009 – 2012
|
Project Status |
Completed (Fiscal Year 2012)
|
Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
|
Keywords | ナノ表面・界面 / ナノ材料 / 磁性 / 物性理論 / ナノ界面 / 表面・界面物性 / 格子欠陥 / 第一原理計算 |
Research Abstract |
Theoretical investigations on magnetism based on first-principles calculations were conducted for interfaces between nitride-semiconductors such as GaN and non-magnetic materials. Prediction of interface ferromagnetism for AlN/MgB2 and its spin-transport properties were published in Physical Review Letters. In addition, findings on spin properties of GaN/graphene interfaces were disclosed in Applied Physics Letters.
|
Report
(5 results)
Research Products
(52 results)