| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2011: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2009: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Research Abstract |
In this work, we fabricated the nanowire phase-change memories with two methods :(1)EBL using the positive resist ZEP-520A followed by phase-change material deposition and lift-off processes,(2)EBL using the negative resist hydrogen silsesquioxane(HSQ)followed by reactive ion etching(RIE)after phase-change material deposition. We also demonstrated the fabrication and phase change memory performance of a conical TiN/Ge2Sb2Te5(GST)/TiN nanoarray(aerial array density : 207 Gbit inch2)prepared via block copolymer lithography and straightforward two-step etching. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials
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