Development of electron spin qubits using silicon quantum dots
| Project/Area Number |
21710137
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
KODERA Tetsuo Tokyo Institute of Technology, 量子ナノエレクトロニクス研究センター, 助教 (00466856)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2009: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
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| Keywords | 量子ドット / シリコン量子ドット / 量子コンピュータ / 少数電子素子 / 半導体量子ドット / 量子ビット / スピン / スピンコヒーレンス |
|---|
| Research Abstract |
The purpose of this work is to study physics and develop elemental technologies for realizing quantum information devices using electron spins in silicon quantum dots as qubits. We propose a novel device structure and its fabrication techniques for lithographically-defined silicon QDs. We successfully fabricated coupled QDs utilizing electron beam lithography, reactive ion etching, and oxidation, in a metal-oxide-semiconductor structure on a non-doped silicon-on-insulator substrate. We then succeeded in observing a single-electron regime in the QD and spin-related tunneling phenomena.
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Report
(3 results)
Research Products
(35 results)
