Control of high-density carrier dynamics in silicon nanostructures
| Project/Area Number |
21740226
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Condensed matter physics I
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| Research Institution | Kyoto University |
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Principal Investigator |
TAYAGAKI Takeshi Kyoto University, 化学研究所, 准教授 (80422327)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2009: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
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| Keywords | 光物性 / 半導体物性 / ナノ材料 |
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| Research Abstract |
Auger recombination appears under high-density photocarrier conditions in semiconductor nanostructures. It plays an important role for optical applications of semiconductor nanostructures to optoelectronic devices such as laser and solar cells. We studied photoluminescence dynamics under high-density photoexcitation in silicon-based nanostructures with various structural parameters and under an electric field. We found that the Auger recombination rates depend strongly on the shape of nanostructures and that the control of Auger recombination is available by manipulating the wave functions of photocarriers in designed confinement potential.
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Report
(3 results)
Research Products
(11 results)
