Control of high-density carrier dynamics in silicon nanostructures

• Project/Area Number: 21740226
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Condensed matter physics I
• Research Institution: Kyoto University
• Principal Investigator: TAYAGAKI Takeshi Kyoto University, 化学研究所, 准教授 (80422327)
• Project Period (FY): 2009 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000); Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2009: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
• Keywords: 光物性 / 半導体物性 / ナノ材料

Research Abstract

Auger recombination appears under high-density photocarrier conditions in semiconductor nanostructures. It plays an important role for optical applications of semiconductor nanostructures to optoelectronic devices such as laser and solar cells. We studied photoluminescence dynamics under high-density photoexcitation in silicon-based nanostructures with various structural parameters and under an electric field. We found that the Auger recombination rates depend strongly on the shape of nanostructures and that the control of Auger recombination is available by manipulating the wave functions of photocarriers in designed confinement potential.

Research Products

• [Journal Article] Auger recombination in Si1-xGex/Si quantum wells under high-density photoexcitation (2011)
  • Author(s): T.Tayagaki, S.Fukatsu, Y.Kanemitsu
  • Journal Title: physica status solidi.C 8 Pages: 1049-1054
  • Peer Reviewed
• [Journal Article] Auger recombination in Si_<1-x>Ge_x/Si quantum wells under high-density photoexcitation (2011)
  • Author(s): T.Tayagaki
  • Journal Title: physica status solidi.C Volume: 8 Pages: 1049-1054
  • Peer Reviewed
• [Journal Article] Control of Auger recombination rate in Si1-xGex/Si heterostructures (2010)
  • Author(s): T.Tayagaki, S.Fukatsu, Y.Kanemitsu
  • Journal Title: J.Phys.Soc.Jpn. 79
  • NAID: 210000108160
  • Peer Reviewed
• [Journal Article] Control of Auger recombination rate in Si_<1-x>Ge_x/Si heterostructures (2010)
  • Author(s): T.Tayagaki
  • Journal Title: Journal of the Physical Society of Japan 79
  • NAID: 10025964078
  • Peer Reviewed
• [Presentation] Well-width dependence of Auger recombination rate in Si1-xGex/Si single quantum wells under high-density photoexcitation (2010)
  • Author(s): T.Tayagaki, S.Fukatsu, Y.Kanemitsu
  • Organizer: European Materials Research Society Spring Meeting (2010)
  • Place of Presentation: Strasbourg, France.
  • Year and Date: 2010-06-09
• [Presentation] Well-width dependence of Auger recombination rate in Si_<1-x>Ge_x/Si single quantum wells under high-density photoexcitation (2010)
  • Author(s): T.Tayagaki
  • Organizer: European Materials Research Society Spring Meeting (2010)
  • Place of Presentation: Strasbourg, France(招待講演)
  • Year and Date: 2010-06-09
• [Presentation] SiGe/Si量子井戸における高密度キャリア発光の電場効果 (2009)
  • Author(s): 太野垣健, 深津晋, 金光義彦
  • Organizer: 日本物理学会秋季大会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-09-25
• [Presentation] SiGe/Si量子井戸における高密度キャリア発光の電場効果 (2009)
  • Author(s): 太野垣健
  • Organizer: 日本物理学会2009年秋季大会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-09-25
• [Presentation] SiGe/Si量子井戸における高密度キャリア発光の電場依存性 (2009)
  • Author(s): 太野垣健, 深津晋, 金光義彦
  • Organizer: 応用物理学会
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-10
• [Presentation] SiGe/Si量子井戸における高密度キャリア発光の電場依存性 (2009)
  • Author(s): 太野垣健
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-10
• [Remarks] ホームページ
  • URL: http://www.scl.kyoto-u.ac.jp/~opt-nano/