Photo irradiation effect on transition metal oxide thin films
| Project/Area Number |
21740274
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Condensed matter physics II
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| Research Institution | Osaka University |
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Principal Investigator |
WAKABAYASHI Yusuke Osaka University, 大学院・基礎工学研究科, 准教授 (40334205)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2009: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
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| Keywords | 強相関電子系 / 光誘起相転移 / 遷移金属酸化物 / 薄膜 / 表面構造解析 |
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| Research Abstract |
The atomic scale structures of manganese oxide thin films have been studied by means of synchrotron x-ray diffraction. While the main target of our study was the film exhibiting a photo-induced metal-insulator switching, the sample was too unstable to obtain reliable results. Instead, the technique of the structure determination of film system was improved and the difference in metallic and insulating films has been clarified.
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Report
(3 results)
Research Products
(42 results)
