Superlattice semiconductor photocathode for the electron beam source with a high brightness and a long NEA-surface lifetime.
| Project/Area Number |
21740305
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Atomic/Molecular/Quantum electronics
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| Research Institution | The Institute of Physical and Chemical Research |
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Principal Investigator |
NISHITANI Tomohiro 独立行政法人理化学研究所, 延與放射線研究室, 客員研究員 (40391320)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥260,000 (Direct Cost: ¥200,000、Indirect Cost: ¥60,000)
Fiscal Year 2009: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
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| Keywords | フォトカソード / 高輝度電子源 / ガリウムヒ素半導体 / 超格子半導体 / 負電子親和力表面 / 長寿命化 / 高耐久化 / スピン偏極電子源 |
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| Research Abstract |
The aim of this study is the realization of the novel electron source using a semiconductor photocathode with high brightness and long NEA-surface-lifetime. This study found that the quantum confinement effect in a superlattice structure has the advantage of small energy spread of extracted electrons and the semiconductor which has small electron affinity and large band-gap energy had the advantage of long NEA-surface-lifetime. The p-GaN photocathode with a bulk structure for the long NEA-surface-lifetime and the InGaN-GaN superlattice photocathode for the generation of photoelectrons with small energy spread ware developed. As a successful result, the p-GaN photocathode achieved ten times longer lifetime than the GaAs photocathode with a bulk structure known as the conventional photocathode and the effective quantum confinement effect was observed by the quantum yield spectrum of the InGaN-GaN superlattice photocathode.
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Report
(4 results)
Research Products
(24 results)
