Electrochemical metal/semiconductor coating of insulators
| Project/Area Number |
21750011
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Physical chemistry
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| Research Institution | The University of Tokyo |
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Principal Investigator |
NAKANISHI Shuji The University of Tokyo, 先端科学技術研究センター, 特任准教授 (40333447)
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| Project Period (FY) |
2009 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2009: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 結晶成長 / 表面界面物性 / 薄膜形成 / 電気化学 / 界面エネルギー / 赤外分光 |
|---|
| Research Abstract |
In the present work, electrochemical coating of insulators such as glass and silicon by metals was successfully achieved. Electrochemical characterization of the growth mode of the films revealed that adatom density at the growing films is a key factor that determines the success or failure of the coating of insulators.
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Report
(3 results)
Research Products
(9 results)
