Synthesis of boron doped diamond under high pressure environment
| Project/Area Number |
21750156
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Functional materials chemistry
|
|---|
| Research Institution | National Institute for Materials Science |
|---|
Principal Investigator |
KAWASHIMA Tetsuya National Institute for Materials Science, 超伝導材料センター, 主任研究員 (00354308)
|
|---|
| Project Period (FY) |
2009 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2010: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2009: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
|
|---|
| Keywords | ダイヤモンド / 超伝導 / 高圧合成 |
|---|
| Research Abstract |
In this study, we adopted the new high-pressure synthetic technique, which carbonate is used as diamond producing catalysts, and achieved to prepare the boron doped superconducting diamond crystal under lower P-T condition reported before. Our sample showed maximum superconducting transition temperature (T_c) at 10.3 K, which is the highest T_c ever reported about high-pressure synthetic diamond.
|
Report
(3 results)
Research Products
(6 results)
