Study of large magnetoresistance effect in quantum cross devices
| Project/Area Number |
21760001
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | Hokkaido University |
|---|
Principal Investigator |
KAIJU Hideo Hokkaido University, 電子科学研究所, 助教 (70396323)
|
|---|
| Project Period (FY) |
2009 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2009: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
|
|---|
| Keywords | スピントロニクス / 磁気抵抗効果 / ナノ接合 / 有機膜 / 強磁性体 / 表面・界面状態 / 磁化状態 / 電流電圧特性 / 有機分子膜 / 表面状態 / バリスティック伝導 |
|---|
| Research Abstract |
In this study, we have proposed quantum cross devices, which consist of organic molecules sandwiched between two ferromagnetic metals whose edges are crossed, and investigated their surface and interfacial structures, electrical characteristics, and magnetic properties. From the viewpoint of surface structures, magnetic properties, and edge states, Co/SiO2 is found to be the best materials for electrodes in quantum cross devices. As a result of the fabrication of Co/molecules/Co quantum cross devices, interesting switching properties have been successfully observed at room temperature.
|
Report
(3 results)
Research Products
(57 results)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[Presentation] Fabrication and Evaluation of Ni/P3HT : PCBM/Ni Nanoscale Junctions2010
Author(s)
H.Kaiju, K.Kondo, N.Basheer, N.Kawaguchi, S.White, A.Hirata, M.Ishimaru, Y.Hirotsu, A.Ishibashi
Organizer
International Symposium on Joint Research Network for Advanced Material and Devices, pp.113-114, P-32
Place of Presentation
Tomakomai, Japan
Year and Date
2010-03-25
Related Report
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
