Fabrication of red light-emitting devices using the rare-earth doped nitride semiconductors and the elucidation of luminescence mechanism

• Project/Area Number: 21760007
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Osaka University
• Principal Investigator: NISHIKAWA Atsushi Osaka University, 工学研究科, 助教 (60417095)
• Project Period (FY): 2009 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000); Fiscal Year 2009: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
• Keywords: 窒化物半導体 / ユウロピウム / 赤色発光ダイオード / OMVPE法 / 窒化ガリウム / 有機金属気相エピタキシャル法 / 赤色発光 / フォトルミネセンス / 4f殻内遷移 / LED / 電流注入型デバイス

Research Abstract

We have succeeded in the growth of Eu-doped GaN layer grown by organometallic vapor phase epitaxy and demonstrated the first operation of current-injected red emission from a Eu-doped GaN LED. We have found strong influence of growth temperature and pressure on Eu luminescence intensity. As a result, improved light output power of 17 μW was achieved.

Research Products

• [Journal Article] Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy (2011)
  • Author(s): A.Nishikawa, N.Furukawa, T.Kawasaki, Y.Terai, Y.
  • Journal Title: Optical Materials 33 Pages: 1071-1074
  • Peer Reviewed
• [Journal Article] Site and sample dependent electron-phonon coupling of Eu ions in epitaxial-grown GaN layers (2011)
  • Author(s): N.Woodward, A.Nishikawa, Y.Fujiwara, V.Dierolf
  • Journal Title: Optical Materials 33 Pages: 1050-1054
  • Peer Reviewed
• [Journal Article] Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center (2011)
  • Author(s): N.Woodward, J.Poplawsky, B.Mitchell, A.Nishikawa, Y.Fujiwara, V.Dierolf
  • Journal Title: Appl.Phys.Lett. 98
  • Peer Reviewed
• [Journal Article] Excitation of Eu^<3+> in gallium nitride epitaxial layers : Majority versus trap defectcenter (2011)
  • Author(s): N.Woodward, J.Poplawsky, B.Mitchell, A.Nishikawa, Y.Fujiwara, V.Dierolf
  • Journal Title: Applied Physics Letters Volume: 98
  • Peer Reviewed
• [Journal Article] Lattice site location of optical centres in GaN:Eu LED material grown by organometallic vapor phase epitaxy (2010)
  • Author(s): K.Lorenz, E.Alves, I.S.Roqan, K.P.O'Donnell, A.Nishikawa, Y.Fujiwara
  • Journal Title: Appl.Phys.Lett. 97
  • Peer Reviewed
• [Journal Article] Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy (2010)
  • Author(s): N.Furukawa, A.Nishikawa, T.Kawasaki, Y.Terai, Y.Fujiwara
  • Journal Title: Phys.Stat.Sol.A 208 Pages: 445-448
  • Peer Reviewed
• [Journal Article] 有機金属気相エピタキシャル法によるユウロピウム添加窒化ガリウムの成長温度依存性 (2010)
  • Author(s): 西川敦、川崎隆志、古川直樹、寺井慶和、藤原康文
  • Journal Title: 材料 59 Pages: 690-693
  • NAID: 130000335797
  • Peer Reviewed
• [Journal Article] Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy (2010)
  • Author(s): A.Nishikawa, N.Furukawa, T.Kawasaki, Y.Terai, Y.Fujiwara
  • Journal Title: Appl.Phys.Lett. 97
  • Peer Reviewed
• [Journal Article] Improved Eu Luminescence Properties in Eu-Doped GaN Grown on GaN Substrates by Organometallic Vapor Phase Epitaxy (2010)
  • Author(s): H.Kasai, A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
  • Journal Title: Jpn.J.of Appl.Phys. 49
  • NAID: 210000068155
  • Peer Reviewed
• [Journal Article] 希土類添加半導体の現状と将来展望 (2010)
  • Author(s): 藤原康文、寺井慶和、西川敦
  • Journal Title: 応用物理 79 Pages: 25-31
  • NAID: 10026198784
  • Peer Reviewed
• [Journal Article] Effect of Growth Temperature on Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy (2010)
  • Author(s): T.Kawasaki, A.Nishikawa, N.Furukawa, Y.Terai, Y.Fujiwara
  • Journal Title: Phys.Stat.Sol.C 7 Pages: 2040-2043
  • Peer Reviewed
• [Journal Article] Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE (2010)
  • Author(s): A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara.
  • Journal Title: Phys.Stat.Sol.A 207 Pages: 1397-1400
  • Peer Reviewed
• [Journal Article] Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE (2010)
  • Author(s): A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
  • Journal Title: physica status solidi A Volume: 207 Pages: 1397-1399
  • Peer Reviewed
• [Journal Article] Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy (2010)
  • Author(s): A.Nishikawa, N.Furukawa, T.Kawasaki, Y.Terai, Y.Fujiwara
  • Journal Title: Applied Physics Letters Volume: 97
  • Peer Reviewed
• [Journal Article] 有機金属気相エピタキシャル法によるユウロピウム添加窒化ガリウムの成長温度依存性 (2010)
  • Author(s): 西川敦、川崎隆志、古川直樹、寺井慶和、藤原康文
  • Journal Title: 材料 Volume: 59 Pages: 690-693
  • NAID: 130000335797
  • Peer Reviewed
• [Journal Article] Effect of Growth Temperature on Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy (2010)
  • Author(s): T.Kawasaki, A.Nishikawa, N.Furukawa, Y.Terai, Y.Fujiwara
  • Journal Title: physica status solidi C Volume: 7 Pages: 2040-2043
  • Peer Reviewed
• [Journal Article] Improved Eu Luminescence Properties in Eu-Doped GaN Grown by Organometallic Vapor Phase Epitaxy (2010)
  • Author(s): H.Kasai, A.Nishikawa, Y.Terai, Y.Fujiwara
  • Journal Title: Jpn.J.Appl.Phys. Volume: 49
  • Peer Reviewed
• [Journal Article] Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy (2010)
  • Author(s): N.Furukawa, A.Nishikawa, T.Kawasaki, Y.Terai, Y.Fujiwara
  • Journal Title: Physica Status Solidi A Volume: 208 Pages: 445-448
  • Peer Reviewed
• [Journal Article] Lattice site location of optical centres in GaN : Eu LED material grown by organo metallic vapor phase epitaxy (2010)
  • Author(s): K.Lorenz, E.Alves, I.S.Roqan, K.P.O'Donnell, A.Nishikawa, Y.Fujiwara
  • Journal Title: Applied Physics Letters Volume: 97
  • Peer Reviewed
• [Journal Article] Optical properties of Eu-implanted GaN and related-alloy semiconductors (2009)
  • Author(s): A.Nishikawa, H.Kasai, T.Kawasaki, Y.Terai, Y.Fujiwara
  • Journal Title: Journal of Physics, Conference Series 191
  • Peer Reviewed
• [Journal Article] Room-temperature red emission from p-type/europium-doped/n-type gallium nitride light-emitting diodes under current injection (2009)
  • Author(s): A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
  • Journal Title: Applied Physics Express 2
  • NAID: 10025087007
  • Peer Reviewed
• [Journal Article] Luminescence Properties of Eu-implanted GaN-based Semiconductors (2009)
  • Author(s): H.Kasai, A.Nishikawa, Y.Terai, Y.Fujiwara
  • Journal Title: Journal of Physics, Conference Series 165
  • Peer Reviewed
• [Journal Article] Room-temperature red emission from a p-type/europium-doped /n-type gallium nitride light-emitting diode under current injection (2009)
  • Author(s): A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
  • Journal Title: Appl.Phys.Express 2
  • NAID: 10025087007
  • Peer Reviewed
• [Journal Article] Optical properties of Eu-implanted GaN and related-alloy semiconductors (2009)
  • Author(s): A.Nishikawa, H.Kasai, T.Kawasaki, Y.Terai, Y.Fujiwara
  • Journal Title: Journal of Physics : Conference Series 191
  • Peer Reviewed
• [Journal Article] Luminescence Properties of Eu-implanted GaN-based Semiconductors (2009)
  • Author(s): H.Kasai, A.Nishikawa, Y.Terai, Y.Fujiwara
  • Journal Title: Journal of Physics : Conference Series 165
  • Peer Reviewed
• [Journal Article] Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy
  • Author(s): A.Nishikawa, N.Furukawa, T.Kawasaki, Y.Terai, Y.Fujiwara
  • Journal Title: Optical Materials Volume: (印刷中)
  • Peer Reviewed
• [Journal Article] Site and sample dependent electron-phonon coupling of Eu ions in epitaxial-grown GaN layers
  • Author(s): N.Woodward, A.Nishikawa, Y.Fujiwara, V.Dierolf
  • Journal Title: Optical Materials Volume: (印刷中)
  • Peer Reviewed
• [Journal Article] Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE
  • Author(s): A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
  • Journal Title: physica status solidi (印刷中)
  • Peer Reviewed
• [Journal Article] Effect of Growth Temperature on Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy
  • Author(s): T.Kawasaki, A.Nishikawa, N.Furukawa, Y.Terai, Y.Fujiwara
  • Journal Title: physica status solidi (印刷中)
  • Peer Reviewed
• [Journal Article] Improved Eu Luminescence Properties in Eu-Doped GaN Grown by Organometallic Vapor Phase Epitaxy
  • Author(s): H.Kasai, A.Nishikawa, Y.Terai, Y.Fujiwara
  • Journal Title: Jpn.J.Appl.Phys (印刷中)
  • Peer Reviewed
• [Presentation] Eu添加GaNにおけるMg共添加によるEu発光強度の増大 (2011)
  • Author(s): 李東建、西川敦、古川直樹、川〓昂佑、寺井慶和、藤原康文
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 厚木市
  • Year and Date: 2011-03-26
• [Presentation] 蛍光XAFS法によるEu添加GaNのEuイオン周辺局所構造解析 (2011)
  • Author(s): 大渕博宣、西川敦、古川直樹、寺井慶和、藤原康文、本間徹生
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 厚木市
  • Year and Date: 2011-03-26
• [Presentation] OMVPE法により作製したEu添加AlGaNのEu発光特性 (2011)
  • Author(s): 川〓昂佑、西川敦、李東建、古川直樹、寺井慶和、藤原康文
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 厚木市
  • Year and Date: 2011-03-26
• [Presentation] Eu添加GaN発光ダイオードの光学特性 (2011)
  • Author(s): 西川敦、古川直樹、李東建、川〓昂佑、寺井慶和、藤原康文
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 厚木市
  • Year and Date: 2011-03-25
• [Presentation] Red light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy (2010)
  • Author(s): Y.Fujiwara, A.Nishikawa, Y.Terai
  • Organizer: 15^<th> International Workshop on Inorganic and Organic Electroluminescence & 2010 International Conference on the Science and Technology of Emissive Displays and Lighting & XVIII Advanced Display Technologies International Symposium
  • Place of Presentation: St.Petersburg, Russia
  • Year and Date: 2010-09-29
• [Presentation] 常圧有機金属気相エピタキシャル法により作製されたEu添加GaNにおけるEu発光強度の増大 (2010)
  • Author(s): 古川直樹, 西川敦, 川崎隆志, 寺井慶和, 藤原康文
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎市
  • Year and Date: 2010-09-16
• [Presentation] Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection (2010)
  • Author(s): 西川敦、川崎隆志、古川直樹、寺井慶和、藤原康文
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(招待講演)
  • Year and Date: 2010-09-15
• [Presentation] Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection (2010)
  • Author(s): 西川敦、川崎隆志、古川直樹、寺井慶和、藤原康文
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎市(招待講演)
  • Year and Date: 2010-09-15
• [Presentation] New development in rare-earth-doped semiconductors: room-temperature operation of light-emitting diodes exhibiting rare-earth emission under current injection (2010)
  • Author(s): Y.Fujiwara, A.Nishikawa, Y.Terai
  • Organizer: 29th Electronic Materials Symposium
  • Place of Presentation: Izu(INVITED)
  • Year and Date: 2010-07-15
• [Presentation] New development in rare-earth-doped semiconductors: room-temperature operation of light-emitting diodes exhibiting rare-earth emission under current injection (2010)
  • Author(s): Y.Fujiwara, A.Nishikawa, Y.Terai
  • Organizer: 29th Electronic Materials Symposium
  • Place of Presentation: 伊豆市(招待講演)
  • Year and Date: 2010-07-15
• [Presentation] Growth temperature dependence of Eu-doped GaN grown by organometallic vaporphase epitaxy (2010)
  • Author(s): N.Furukawa, A.Nishikawa, T.Kawasaki, S.Anada, N.Woodward, V.Dierolf, Y.Terai, Y.Fujiwara
  • Organizer: 29th Electronic Materials Symposium
  • Place of Presentation: 伊豆市
  • Year and Date: 2010-07-15
• [Presentation] Organometallic vapor phase epitaxial growth of Eu-doped GaN and its application to red light-emitting diodes operating at room temperature (2010)
  • Author(s): Y.Fujiwara, A.Nishikawa, Y.Terai
  • Organizer: Third International Symposium on Growth of III-Nitrides(ISGN3)
  • Place of Presentation: Montpellier, France(招待講演)
  • Year and Date: 2010-07-07
• [Presentation] Room-temperature red emission from light emitting-diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy (2010)
  • Author(s): A.Nishikawa, Y.Terai, Y.Fujiwaza
  • Organizer: 2010 European Materials Research Society Spring Meeting(E-MRS2007)
  • Place of Presentation: Strasbourg, France(招待講演)
  • Year and Date: 2010-06-08
• [Presentation] Europium incorporation in GaN grown by metal organic chemical vapour deposition (2010)
  • Author(s): K.Lorenz, E.Alves, I.S.Roqan, K.P.O'Donnell, A.Nishikawa, Y.Fujiwara, M.Bockowski
  • Organizer: 2010 European Materials Research Society Spring Meeting (E-MRS2007)
  • Place of Presentation: Strasbourg, France
  • Year and Date: 2010-06-08
• [Presentation] Site selective excitation pathways of in-situ doped Eu : GaN grown by MOCVD (2010)
  • Author(s): N.Woodward, V.Dierolf, A.Nishikawa, Y.Fujiwara
  • Organizer: 2010 European Materials Research Society Spring Meeting (E-MRS2007)
  • Place of Presentation: Strasbourg, France
  • Year and Date: 2010-06-08
• [Presentation] Atmospheric-pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy (2010)
  • Author(s): N.Furukawa, A.Nishikawa, T.Kawasaki, S.Anada, Y.Terai, Y.Fujiwara
  • Organizer: 37th International Symposium on Compound Semiconductors
  • Place of Presentation: 高松市(招待講演)
  • Year and Date: 2010-06-04
• [Presentation] Growth temperature dependence of Eu-doped GaN by organometallic vapor phase epitaxy (2010)
  • Author(s): A.Nishikawa, T.Kawasaki, N.Furukawa, S.Anada, N.Woodward, V.Dierolf, S.Emura, H.Asahi, Y Terai, Y.Fujiwara
  • Organizer: International Conference on Core Research and Engineering Science of Advanced Materials
  • Place of Presentation: 吹田市
  • Year and Date: 2010-06-01
• [Presentation] Recent progress in rare-earth-doped semiconductors (2010)
  • Author(s): Y.Fujiwara, A.Nishikawa, Y.Terai
  • Organizer: 2010 International Conference on Compound Semiconductor Manufacturing Technology(CS MANTECH)
  • Place of Presentation: Portland, USA(招待講演)
  • Year and Date: 2010-05-19
• [Presentation] 常圧有機金属気相エピタキシャル法によるEu添加GaNの作製とLED特性の改善 (2010)
  • Author(s): 古川直樹、西川敦、川崎隆志、寺井慶和、藤原康文
  • Organizer: 日本材料学会半導体エレクトロニクス委員会平成22年度第1回研究会
  • Place of Presentation: 吹田市
  • Year and Date: 2010-05-08
• [Presentation] OMVPE法により作製したEu添加GaNにおけるEu発光特性のV/III比依存性 (2010)
  • Author(s): 西川敦、古川直樹、李東建、川〓昂佑、寺井慶和、藤原康文
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 厚木市
  • Year and Date: 2010-03-26
• [Presentation] 有機金属気相エピタキシャル法によるEu添加GaNの成長温度依存性(II) (2010)
  • Author(s): 古川直樹、西川敦、川崎隆志、穴田智史、N.Woodward、VDierolf、丹保浩行、江村修一、朝日一、寺井慶和、藤原康文
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学、平塚市
  • Year and Date: 2010-03-20
• [Presentation] p-GaN/Eu 添加GaN/n-GaN 発光ダイオードによる室温電流注入赤色発光 (2010)
  • Author(s): 西川敦、川崎隆志、古川直樹、寺井慶和、藤原康文
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(招待講演)
  • Year and Date: 2010-03-17
• [Presentation] p-GaN/Eu添加GaN/n-GaN発光ダイオードによる室温電流注入赤色発光【応用物理学会講演奨励賞記念講演】 (2010)
  • Author(s): 西川敦, 川崎隆志, 古川直樹, 寺井慶和, 藤原康文, 【招待講演】
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学、平塚市
  • Year and Date: 2010-03-17
• [Presentation] 有機金属気相成長法によるEu添加GaNの作製とLEDデバイス応用 (2010)
  • Author(s): 西川敦、寺井慶和、藤原康文
  • Organizer: 応用物理学会関西支部セミナー
  • Place of Presentation: 大阪府立大学(招待講演)
  • Year and Date: 2010-01-09
• [Presentation] 有機金属気相成長法によるEu添加GaNの作製とLEDデバイス応用 (2010)
  • Author(s): 西川敦, 寺井慶和, 藤原康文,【招待講演】
  • Organizer: 応用物理学会関西支部セミナー
  • Place of Presentation: 大阪府立大学、堺市
  • Year and Date: 2010-01-09
• [Presentation] Red light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy (2010)
  • Author(s): Y.Fujiwara, A.Nishikawa, Y.Terai
  • Organizer: 15th International Workshop on Inorganic and Organic Electroluminescence&2010 International Conference on the Science and Technology of Emissive Displays and Lighting&XVIII Advanced Display Technologies International Symposium
  • Place of Presentation: St.Petersburg, Russia(INVITED)
• [Presentation] Organometallic vapor phase epitaxial growth of Eu-doped GaN and its application to red light-emitting diodes operating at room temperature (2010)
  • Author(s): Y.Fujiwara, A.Nishikawa, Y.Terai
  • Organizer: Third International Symposium on Growth of III-Nitrides (ISGN3), We4-2
  • Place of Presentation: Montpellier, France(INVITED)
• [Presentation] Site selective excitation pathways of in-situ doped Eu : GaN grown by MOCVD (2010)
  • Author(s): N.Woodward, V.Dierolf, A.Nishikawa, Y.Fujiwara
  • Organizer: 2010 European Materials Research Society Spring Meeting (E-MRS2010), 8.12
  • Place of Presentation: Strasbourg, France
• [Presentation] Europium incorporation in GaN grown by metal organic chemical vapour deposition (2010)
  • Author(s): K.Lorenz, E.Alves, I.S.Roqan, K.P.O'Donnell, A.Nishikawa, Y.Fujiwara, M.Bockowski
  • Organizer: 2010 European Materials Research Society Spring Meeting (E-MRS2010), 5.2
  • Place of Presentation: Strasbourg, France
• [Presentation] Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy (2010)
  • Author(s): A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
  • Organizer: 2010 European Materials Research Society Spring Meeting (E-MRS2010), 5.1
  • Place of Presentation: Strasbourg, France(INVITED)
• [Presentation] Atmospheric-pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy (2010)
  • Author(s): N.Furukawa, A.Nishikawa, T.Kawasaki, S.Anada, Y.Terai, Y.Fujiwara
  • Organizer: 37th International Symposium on Compound Semiconductors, FrD1-1, Takamatsu Symbol Tower
  • Place of Presentation: Kagawa, Japan(INVITED)
• [Presentation] Recent progress in rare-earth-doped semiconductors (2010)
  • Author(s): Y.Fujiwara, A.Nishikawa, Y.Terai
  • Organizer: 2010 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), 12.4
  • Place of Presentation: Portland, USA(INVITED)
• [Presentation] Rare-earth-doped semiconductor-based light-emitting diodes operating at room temperature (2010)
  • Author(s): Y.Fujiwara, A.Nishikawa, Y.Terai
  • Organizer: 4th International Conference on LED and Solid State Lighting (LED2010), W-II-2
  • Place of Presentation: Seoul, Korea(INVITED)
• [Presentation] 有機金属気相エピタキシャル法によるEu添加GaNの成長温度依存性 (2009)
  • Author(s): 古川直樹、川崎隆志、穴田智史、西川敦、寺井慶和、藤原康文
  • Organizer: 日本材料学会半導体エレクトロニクス部門研究会
  • Place of Presentation: 大阪工業大学、大阪市
  • Year and Date: 2009-12-19
• [Presentation] 有機金属気相成長エピタキシャル法によるユウロピウム添加GaN赤色発光ダイオードの室温電流注入発光 (2009)
  • Author(s): 西川敦
  • Organizer: 第39回結晶成長国内会議(NCCG-39)
  • Place of Presentation: 名古屋大学(招待講演)
  • Year and Date: 2009-11-13
• [Presentation] 有機金属気相成長エピタキシャル法によるユウロピウム添加GaN赤色発光ダイオードの室温電流注入発光 (2009)
  • Author(s): 西川敦, 【招待講演】
  • Organizer: 第39回結晶成長国内会議(NCCG-39)
  • Place of Presentation: 名古屋大学、名古屋市
  • Year and Date: 2009-11-13
• [Presentation] Low-Voltage Operation of Current-Injection Red Emission from P-GaN/Eu-Doped GaN/N-GaN Light-Emitting Diodes (2009)
  • Author(s): A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
  • Organizer: 8th International Conference on Nitride Semiconductors (ICNS)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 2009-10-22
• [Presentation] Effect of Growth Temperature on Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy (2009)
  • Author(s): T.Kawasaki, A.Nishikawa, N.Furukawa, Y.Terai, Y.Fujiwara
  • Organizer: 8th International Conference on Nitride Semiconductors (ICNS)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 2009-10-22
• [Presentation] Room-temperature electroluminescence properties of p-GaN/Eu-doped GaN/n-GaN light-emitting diodes (2009)
  • Author(s): A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
  • Organizer: 3rd Workshop of Impurity Based Electroluminescent Devices and Materials
  • Place of Presentation: Tossa de Mar, Spain
  • Year and Date: 2009-10-02
• [Presentation] 有機金属気相エピタキシャル法によるEu添加GaNの作製と発光特性 (2009)
  • Author(s): 西川敦、川崎隆志、古川直樹、寺井慶和、藤原康文
  • Organizer: 第70回応用物理学会学術講演会、多元系機能材料研究会・結晶工学分科会合同企画
  • Place of Presentation: 富山大学(招待講演)
  • Year and Date: 2009-09-10
• [Presentation] 有機金属気相エピタキシャル法によるEu添加GaNの作製と発光特性 (2009)
  • Author(s): 西川敦, 川崎隆志, 古川直樹, 寺井慶和, 藤原康文, 【招待講演】
  • Organizer: 第70回応用物理学会学術講演会、多元系機能材料研究会・結晶工学分科会 合同企画
  • Place of Presentation: 富山大学、富山市
  • Year and Date: 2009-09-10
• [Presentation] p-GaN/Eu添加GaN/n-GaN発光ダイオードによる室温電流注入赤色発光 (2009)
  • Author(s): 西川敦, 川崎隆志, 古川直樹, 寺井慶和, 藤原康文
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学、富山市
  • Year and Date: 2009-09-10
• [Presentation] OMVPE法によるEu添加GaNの成長温度依存性 (2009)
  • Author(s): 川崎隆志, 古川直樹, 西川敦, 寺井慶和, 藤原康文
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学、富山市
  • Year and Date: 2009-09-10
• [Presentation] Time-resolved photoluminescence in Eu-implanted GaN (2009)
  • Author(s): T.Kawasaki, N.Furukawa, H.Kasai, A.Nishikawa, Y.Terai, Y.Fujiwara
  • Organizer: 28th Electronic Materials Symposium
  • Place of Presentation: ラフォーレ琵琶湖、草津市
  • Year and Date: 2009-07-08
• [Presentation] Low-voltage operation of current-injection red emission from p-GaN/Eu-doped GaN/n-GaN light-emitting diodes (2009)
  • Author(s): A.Nishikawa, T.Kawasaki, N.Furukawa, Y.Terai, Y.Fujiwara
  • Organizer: 8th International Conference on Nitride Semiconductors (ICNS-8), ThP118, Jeju Island
  • Place of Presentation: Korea
• [Presentation] Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy (2009)
  • Author(s): T.Kawasaki, N.Furukawa, A.Nishikawa, Y.Terai, Y.Fujiwara
  • Organizer: 8th International Conference on Nitride Semiconductors (ICNS-8), ThP18, Jeju Island
  • Place of Presentation: Korea
• [Remarks] ホームページ等
  • URL: http://www.mat.eng.osaka-u.ac.jp/mse6/index.html
• [Remarks] 藤原研究室ホームページ
  • URL: http://www.mat.eng.osaka-u.ac.jp/mse6/index.html
• [Remarks] 藤原研究室ホームページ
  • URL: http://www.mat.eng.osaka-u.ac.jp/mse6/index.html
• [Patent(Industrial Property Rights)] 赤色発光半導体素子および赤色発光半導体素子の製造方法 (2010)
  • Inventor(s): 西川敦、藤原康文、寺井慶和、川崎隆志、古川直樹
  • Industrial Property Rights Holder: 国立大学法人大阪大学
  • Filing Date: 2010-04-28
• [Patent(Industrial Property Rights)] 赤色発光半導体素子および赤色発光半導体素子の製造方法 (2009)
  • Inventor(s): 西川敦、藤原康文、寺井慶和、川崎隆志、古川直樹
  • Industrial Property Rights Holder: 国立大学法人大阪大学
  • Industrial Property Number: 2009-112535
  • Filing Date: 2009-05-07