Carrier lifetime evaluation in organic semiconductor by low-frequency noise measurement

Research Project

Project/Area Number	21760008
Research Category	Grant-in-Aid for Young Scientists (B)
Allocation Type	Single-year Grants
Research Field	Applied materials science/Crystal engineering
Research Institution	Tokyo Institute of Technology
Principal Investigator	AZUMA Yasuo Tokyo Institute of Technology, 応用セラミックス研究所, 助教 (80452415)
Project Period (FY)	2009 – 2010
Project Status	Completed (Fiscal Year 2010)
Budget Amount *help	¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000) Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000) Fiscal Year 2009: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Keywords	有機分子 / ノイズ計測 / 有機半導体
Research Abstract	Carrier lifetime in semiconductors is evaluated by low-frequency noise measurements. In Si, carrier lifetime is evaluated as in the order of 100 μs. Temperature dependence of carrier lifetime in Si shows that carrier scattering mechanism changes from ionized impurity scattering to phonon scattering. In pentacene, carrier lifetime is evaluated as in the order of 100 μs. Temperature dependence of carrier lifetime in pentacene implies that carrier transport mechanism changes from hopping transport to band transport.

Report

(3 results)