Carrier lifetime evaluation in organic semiconductor by low-frequency noise measurement
| Project/Area Number |
21760008
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
AZUMA Yasuo Tokyo Institute of Technology, 応用セラミックス研究所, 助教 (80452415)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2009: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 有機分子 / ノイズ計測 / 有機半導体 |
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| Research Abstract |
Carrier lifetime in semiconductors is evaluated by low-frequency noise measurements. In Si, carrier lifetime is evaluated as in the order of 100 μs. Temperature dependence of carrier lifetime in Si shows that carrier scattering mechanism changes from ionized impurity scattering to phonon scattering. In pentacene, carrier lifetime is evaluated as in the order of 100 μs. Temperature dependence of carrier lifetime in pentacene implies that carrier transport mechanism changes from hopping transport to band transport.
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Report
(3 results)
Research Products
(3 results)
