| Project/Area Number |
21760014
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
WATANABE Eiichiro National Institute for Materials Science, ナノテクノロジー融合センター, NIMSポスドク研究員 (10469786)
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| Project Period (FY) |
2009 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2009: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
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| Keywords | グラフェン / ナノギャップ / ナノ材料 / 量子デバイス / ナノコンタクト |
|---|
| Research Abstract |
We fabricated graphene-based nanogap electrodes and investigated a contact resistance between graphene and metallic electrodes for the realization of a single molecule sensing device. As a result, we established the nanogap-fabrication process in few-layer graphene by utilizing an electrical breakdown method. In addition, we investigated the contact resistance by utilizing a transmission line method. The results indicated that the fabrication process and procedure were very important for developing the low resistance ohmic contact to the graphene. These findings are expected to contribute to progress in the development of graphene-based nanoelectronic devices.
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