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Fabrication of atomic layer silicide semiconductor on Si substrates

Research Project

Project/Area Number 21760019
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionNational Institute of Advanced Industrial Science and Technology

Principal Investigator

UCHIDA Noriyuki  National Institute of Advanced Industrial Science and Technology, ナノ電子デバイス研究センター, 研究員 (60400636)

Project Period (FY) 2009 – 2010
Project Status Completed (Fiscal Year 2010)
Budget Amount *help
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2009: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Keywordsナノ材料 / 半導体超微細化 / 半導体物性 / 表面・界面物性 / 物性実験 / ナシ材料
Research Abstract

Transition metal encapsulated silicon cage clusters (MSi_n:M=Nb, Mo, and W) have been suggested as building-blocks to fabricate new silicide materials since they exhibit high chemical stability and retain their structural integrity during deposition. In this study, we have fabricated thin W-encapsulated Si cluster (WSi_<10>) films on Si (100)-2x1 substrates. The film structure and electronic properties were investigated using Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and X-ray photoelectron spectroscopy (XPS). An epitaxial structure (1nm thick) is formed at the interface between the WSi_<10> films and Si substrates by thermal annealing at 500℃. According to XPS measurements, the WSi10 film has a semiconducting energy gap. Thus, the atomic layer silicide semiconductor was fabricated on Si surfaces by deposition of WSi_<10> films and subsequent annealing at 500℃.

Report

(4 results)
  • 2010 Annual Research Report   Final Research Report ( PDF )
  • 2009 Annual Research Report
  • Products Report
  • Research Products

    (4 results)

All 2014 2013 2012 2011

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Patent(Industrial Property Rights) (3 results) (of which Overseas: 1 results)

  • [Journal Article] New semiconducting silicides assembled from transition-metal-encapsulating Siclusters2011

    • Author(s)
      N.Uchida, T.Miyazaki, Y.Matsushita, K.Sameshima, T.Kanayama
    • Journal Title

      Thin Solid Films in press

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Patent(Industrial Property Rights)] 半導体コンタクト構造及びその形成方法2014

    • Inventor(s)
      内田 紀行, 金山 敏彦
    • Industrial Property Rights Holder
      産業技術総合研究所
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-503769
    • Filing Date
      2014-08-26
    • Acquisition Date
      2016-11-25
    • Description
      日本移行行
    • Related Report
      Products Report
  • [Patent(Industrial Property Rights)] 半導体コンタクト構造及びその形成方法2013

    • Inventor(s)
      内田 紀行, 金山 敏彦, 岡田 直也
    • Industrial Property Rights Holder
      独立行政法人産業技術総合研究所
    • Industrial Property Rights Type
      特許
    • Filing Date
      2013-02-25
    • Related Report
      Products Report
    • Overseas
  • [Patent(Industrial Property Rights)] 半導体のコンタクト構造及び形成方法2012

    • Inventor(s)
      内田 紀行, 金山 敏彦, 岡田 直也
    • Industrial Property Rights Holder
      独立行政法人産業技術総合研究所
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2012-049040
    • Filing Date
      2012-03-06
    • Related Report
      Products Report

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Published: 2009-04-01   Modified: 2017-12-12  

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