Project/Area Number |
21760025
|
Research Category |
Grant-in-Aid for Young Scientists (B)
|
Allocation Type | Single-year Grants |
Research Field |
Thin film/Surface and interfacial physical properties
|
Research Institution | Tokyo Institute of Technology |
Principal Investigator |
AOKI Yuki 東京工業大学, 大学院・総合理工学研究科, 助教 (60514271)
|
Project Period (FY) |
2009 – 2011
|
Project Status |
Completed (Fiscal Year 2011)
|
Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
|
Keywords | 水素 / シリコン基板 / 透過 / 超薄膜 / 界面 / 吸着 / 拡散 / パラジウム / 昇温脱離 / 銀 / シリコン / 銀薄膜 |
Research Abstract |
The technological innovation for improvement of the hydrogen storage efficiency is expected. In the viewpoint of the hydrogen absorption in the atomic level, the hydrogen molecule dissociatively adsorbs at the Pd top surface. Subsequently, the hydrogen atom diffuses into the bulk. During the diffusing process toward the bulk, the atomic hydrogen goes through the very near surface region, whose potential energy is drastically different than that of the bulk. Though this very near surface region is very narrow as 1 or 2 atom layers, every hydrogen atom stores into the bulk or releases to the vacuum via this region. Therefore, the investigation of the hydrogen adsorption or desorption mechanism at this peculiar very near surface region is a key for improvement of the hydrogen storage efficiency. This study focuses to the hydrogen adsorption or desorption mechanism at the very near surface region.
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