Property control of oxides from impurity doping toward materials design
| Project/Area Number |
21760030
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Thin film/Surface and interfacial physical properties
|
|---|
| Research Institution | National Institute for Materials Science |
|---|
Principal Investigator |
UMEZAWA Naoto National Institute for Materials Science, 光触媒材料センター, 主任研究員 (20455273)
|
|---|
| Project Period (FY) |
2009 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2009: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
|
|---|
| Keywords | 不純物 / 格子欠陥 / 第一原理計算 / 酸化物 / ゲート絶縁膜 / 光触媒 / 不純物ドープ / 界面制御 / 電子相関 / 欠陥密度 / high-k / 多価元素 / 相関汎関数 |
|---|
| Research Abstract |
This theoretical study revealed that the properties of oxide materials used in semiconductor devices or photocatalysis can be improved by making contacts with other materials or doping with foreign elements. In particular, the proposed method for minimizing defect concentrations by controlling oxygen flows through interfaces between two materials is a noticeable achievement since it gives a new guideline for materials design.
|
Report
(3 results)
Research Products
(21 results)
