Plasma assisted atomic layer deposition with metastable atom exposure

• Project/Area Number: 21760033
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: 防衛大学校
• Principal Investigator: KITAJIMA Takeshi 防衛大学校, 電気情報学群, 准教授 (50424198)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2011: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000); Fiscal Year 2010: ¥260,000 (Direct Cost: ¥200,000、Indirect Cost: ¥60,000); Fiscal Year 2009: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
• Keywords: 表面・界面物性 / プラズマ加工 / 電子・電気材料

Research Abstract

Atomic layer deposition(ALD) is the powerful processing method for the formation of nano thin films with finite thickness control. Low pressure plasma is applied for ALD process to enhance the surface reaction for the reduction of the film impurities. In the paper, HfO2 film deposition from Tetrakis EthylMethyl Amino Hafnium(TEMAH) and Ar diluted O2 plasma is shown as an example. The films are analyzed by X-ray Photoelectron Spectroscopy(XPS), Atomic Force Microscopy(AFM).

Research Products

• [Journal Article] プラズマ支援原子層堆積プロセスによるナノスケール薄膜の形成と評価 (2012)
  • Author(s): 北嶋武、中野俊樹
  • Journal Title: 防衛大学校理工学研究報告 Volume: 50 Pages: 111-116
  • NAID: 40019781819
• [Journal Article] HfO_2 film growth by Ar/O_2 plasma enhanced atomic layer deposition
  • Author(s): Takeshi Kitajima, Toshiki Nakano
  • Journal Title: Journal of Vacuum Science and Technology A Volume: (投稿中)
  • Peer Reviewed
• [Presentation] Size effect of Hf nitridation under nitrogen plasma exposure (2012)
  • Author(s): Takeshi Kitajima, Toshiki Nakano
  • Organizer: 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
  • Place of Presentation: 中部大学(愛知県)
  • Year and Date: 2012-03-07
• [Presentation] High-k/substrate interface reaction by plasma assisted ALD and PVD (2011)
  • Author(s): T. Kitajima, T. Nakano
  • Organizer: Plasma Conference 2011
  • Place of Presentation: 石川県立音楽堂(石川県)
  • Year and Date: 2011-11-24
• [Presentation] Plasma Diagnostics and Nanoscale Surface Processing-Application to SiO_2, High-k PVD and ALD (2011)
  • Author(s): T. Kitajima, T. Nakano
  • Organizer: American Vacuum Society 58th International Symposium
  • Place of Presentation: ナッシュビルコンベンションセンター(アメリカ合衆国、テネシー州)
  • Year and Date: 2011-11-02
• [Presentation] Plasma Diagnostics and Nanoscale Surface Processing-Application to SiO2, High-k PVD and ALD (2011)
  • Author(s): Takeshi Kitajima, Toshiki Nakano
  • Organizer: American Vacuum Society 58th International Symposium
  • Place of Presentation: Nashville Convention Center, Nashville, TN, USA(invited)
  • Year and Date: 2011-11-02
• [Presentation] O_2プラズマ支援HfO2 ALDでのAr希釈の効果 (2011)
  • Author(s): 北嶋武、中野俊樹
  • Organizer: 応用物理学会,第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県)
  • Year and Date: 2011-08-31
• [Presentation] O_2プラズマ支援HfO_2 ALDでのAr希釈の効果 (2011)
  • Author(s): 北嶋武、中野俊樹
  • Organizer: 応用物理学会第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県)
  • Year and Date: 2011-08-31
• [Presentation] SiO_2膜上Hfナノ粒子への窒素プラズマ照射によるHfSiON膜作製～金属Hfの特性と役割 (2011)
  • Author(s): 北嶋武
  • Organizer: 応用物理学会 第58回応用物理学関連連合講演会
  • Place of Presentation: 神奈川工科大学(神奈川県)
  • Year and Date: 2011-03-27
• [Presentation] 窒素プラズマ誘起固液界面反応によるHfSiON膜作製:層間SiO_2厚さの影響 (2011)
  • Author(s): 北嶋武
  • Organizer: 応用物理学会 第58回応用物理学関連連合講演会
  • Place of Presentation: 神奈川工科大学(神奈川県)
  • Year and Date: 2011-03-25
• [Presentation] Nitrogen Plasma induced HfSiON growth from Hf nanoparticles on SiO_2/Si(100)-Roughness improvement by interfacial SiO_2- (2011)
  • Author(s): 北嶋武
  • Organizer: 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
  • Place of Presentation: 名古屋工業大学(愛知県)
  • Year and Date: 2011-03-09
• [Presentation] HfTiSiON Film Growth by N_2 Plasma Exposure to Hf-Ti Liquid Nano Particles on SiO_2/Si (2010)
  • Author(s): 北嶋武
  • Organizer: American Vacuum Society 57th International Symposium
  • Place of Presentation: アルバカーキーコンベンションセンター(アメリカ合衆国)
  • Year and Date: 2010-10-21
• [Presentation] Plasma induced chemistry of self-assembled nanoparticles and underlying surface for High-k film growth (2010)
  • Author(s): 北嶋武
  • Organizer: 63rd Gaseous Electronics Conference & 7th International Conference on Reactive Plasmas
  • Place of Presentation: メゾン・デ・キミー(フランス・パリ)
  • Year and Date: 2010-10-08
• [Presentation] SiO_2膜上Hfナノ粒子への窒素プラズマ照射によるHfSiON膜作製～Hf膜厚依存性 (2010)
  • Author(s): 北嶋武
  • Organizer: 応用物理学会 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
  • Year and Date: 2010-09-17
• [Presentation] 窒素プラズマ誘起固液界面反応によるHfSiON膜作製:界面SiO_2との反応過程 (2010)
  • Author(s): 北嶋武
  • Organizer: 応用物理学会 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
  • Year and Date: 2010-09-15
• [Presentation] 窒素プラズマ誘起固液界面反応によるHfTiSiON膜作製:ナノ粒子均一性の影響 (2010)
  • Author(s): 北嶋武
  • Organizer: 応用物理学会第57回応用物理学関連連合講演会
  • Place of Presentation: 東海大学(神奈川県)
  • Year and Date: 2010-03-19
• [Presentation] 窒素ICP照射によるSiO_2薄膜上Ti配合HfナノドットからのHfriSiON膜の形成 (2010)
  • Author(s): 北嶋武
  • Organizer: 応用物理学会第27回プラズマプロセシング研究会
  • Place of Presentation: 横浜市開港記念会館(神奈川県)
  • Year and Date: 2010-02-01
• [Presentation] SiO_2膜上Hfナノ粒子への窒素プラズマ照射によるHfSiON膜作製 (2009)
  • Author(s): 北嶋武
  • Organizer: 応用物理学会第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山県)
  • Year and Date: 2009-09-10
• [Presentation] 窒素プラズマ誘起固液界面反応によるTi添加HfSiON膜作製 (2009)
  • Author(s): 北嶋武
  • Organizer: 応用物理学会第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山県)
  • Year and Date: 2009-09-08