Study on advanced hydrogen sensors based on field effect transistor structure
| Project/Area Number |
21760052
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied physics, general
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| Research Institution | Tokyo Metropolitan University |
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Principal Investigator |
NAKAMURA Seiji 首都大学東京, 大学院・理工学研究科, 准教授 (70336519)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | センサー / 水素 / 先端機能デバイス / 表面・界面物性 |
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| Research Abstract |
In this study, the hydrogen sensing properties of AlGaN/GaN high electron mobility transistors with Pd gate electrodes are demonstrated for sub-ppm-order to 10% detection in air. The Kelvin-probe characterization was also performed in order to clarify the detection mechanism of hydrogen for Pd/III-nitrides structures. We have investigated that the temperature sweep operation of the Pd/AlGaN/GaN HEMT-based gas sensors is very useful technique for the selective gas detection for hydrogen and hydrocarbons.
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Report
(4 results)
Research Products
(16 results)
