Fundamental study on nonpolar AlInN alloys for polarized UV light emitting devices

• Project/Area Number: 21760227
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokyo National College of Technology (2010); Tohoku University (2009)
• Principal Investigator: ONUMA Takeyoshi Tokyo National College of Technology, 一般教育科, 講師 (10375420)
• Project Period (FY): 2009 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2010: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000); Fiscal Year 2009: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
• Keywords: 窒化物半導体 / AlInN / 結晶成長 / 光物性 / 非極性面 / 表面再結合 / 結晶工学 / エピタキシャル / 半導体物性

Research Abstract

In order to develop the potential ability of nonpolar AlInN alloys for polarized UV light emitters, m-plane AlInN films were grown by metal organic vapor phase epitaxy. Polarization characteristics of the near-band-edge emission in the films suffering from anisotropic stresses were analyzed by theoretical calculation for energies and oscillator strengths of the exciton transitions. Also, studies on the carrier recombination processes at the GaN surfaces indicated the polarization-induced electric field affects the surface recombination in GaN.

Research Products

• [Journal Article] Surface recombination of hexagonal GaN crystals (2011)
  • Author(s): T.Onuma, N.Sakai, T.Okuhata, A.A.Yamaguchi, T. Honda,
  • Journal Title: Physica Status Solidi (c) vol.8 Pages: 1-13
• [Journal Article] Surface recombination of hexagonal GaN crystals (2011)
  • Author(s): T.Onuma
  • Journal Title: Physica Status Solidi (c) Volume: 8 Pages: 1-3
  • Peer Reviewed
• [Presentation] 極性・非極性(Al, In, Ga)N混晶薄膜における振動子強度の歪依存性 (2011)
  • Author(s): 尾沼猛儀, 羽豆耕治, 秩父重英
  • Organizer: 2011年春季応用物理学会(26p-BY-9)
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-26
• [Presentation] 極性・非極性(Al,In,Ga)N混晶薄膜における振動子強度の歪依存性 (2011)
  • Author(s): 尾沼猛儀
  • Organizer: 2011年春季応用物理学会
  • Place of Presentation: 神奈川、日本
  • Year and Date: 2011-03-26
• [Presentation] Surface recombination mechanism in hexagonal GaN crystals (2010)
  • Author(s): N.Sakai, T.Onuma
  • Organizer: The 9th International Symposium on Advanced Technology (ISAT9)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-11-06
• [Presentation] Surface recombination of hexagonal GaN crystals (2010)
  • Author(s): N.Sakai, T.Onuma
  • Organizer: International Workshop on Nitride Semiconductors 2010 (IWN2010)
  • Place of Presentation: Tampa, Florida, USA
  • Year and Date: 2010-09-22
• [Presentation] 自立GaN 基板へのm 面Al_1-xIn_xN 薄膜のMOVPE成長 (2010)
  • Author(s): 秩父重英, 羽豆耕治, 尾沼猛儀
  • Organizer: 2010年春季応用物理学会(17p-TB-4)
  • Place of Presentation: 東海大学
  • Year and Date: 2010-03-17
• [Presentation] 自立GaN基板へのm面Al_<1-x>In_xN薄膜のMOVPE成長 (2010)
  • Author(s): 秩父重英、羽豆耕治、尾沼猛儀
  • Organizer: 応用物理学会
  • Place of Presentation: 東海大学・湘南キャンパス
  • Year and Date: 2010-03-17
• [Presentation] Surface recombination mechanism in hexagonal GaN crystals (2010)
  • Author(s): N.Sakai, T.Onuma, T.Okuhata, A.A.Yamaguchi T.Honda
  • Organizer: The 9th International Symposium on Advanced Technology (ISAT9)(No.P-28.)
  • Place of Presentation: Tokyo, Japan
• [Presentation] Surface recombination of hexagonal GaN crystals (2010)
  • Author(s): N.Sakai, T.Okuhata, T.Onuma, A.A.Yamaguchi, T.Honda
  • Organizer: International Workshop on Nitride Semiconductors 2010 (IWN2010), Tampa(No.GP1.20.)
  • Place of Presentation: Florida, USA
• [Remarks] のうち一部
  • URL: http://www.tagen.tohoku.ac.jp/labo/chichibu/poster/poster.html