Development of advanced ferroelectric random access memory devices in more extensive region

• Project/Area Number: 21760233
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Kanazawa University
• Principal Investigator: KAWAE Takeshi Kanazawa University, 電子情報学系, 講師 (30401897)
• Project Period (FY): 2009 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2009: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
• Keywords: 強誘電体不揮発性メモリ / 非鉛強誘電体 / ワイドギャップ半導体 / ダイヤモンド / BiFeO3 / 強誘電体メモリ / 強誘電体 / 不揮発性メモリ

Research Abstract

As an integration of Pb-free ferroelectrics with wide-gap semiconductors, (Pr, Mn)-codoped BiFeO_3 (BPFM)/B-doped diamond layered structure was fabricated on a diamond substrate. B-doped diamond films were homoepitaxially grown on diamond substrate using microwave plasma-enhanced chemical vapor deposition. Then, BPFM thin films were deposited on the B-doped diamond layer by pulsed laser deposition. BPFM thin films were polycrystalline with random orientations on the B-doped diamond layer. Fabricated heterostructure showed saturated P-E hysteresis curves with 2P_r : 90℃/cm^2 and 2E_c : 740kV/cm for maximum electric field of 900kV/cm at room temperature. P-E hysteresis curves without influences of leakage current were observed even when the measurement temperature was increased to 200 ℃

Research Products

• [Journal Article] Structure and Electrical Properties of (Pr,Mn)-codoped BiFeO_3/B-doped Diamond Layered Structure (2011)
  • Author(s): T.Kawae, Y.Hori, T.Nakajima, H.Kawasaki, N.Tokuda, S.Okamura, Y.Takano, A.Morimoto
  • Journal Title: Electrochemical and Solid-State Letters 14
  • Peer Reviewed
• [Journal Article] Structure and Electrical Properties of (Pr, Mn)-codoped BiFeO3/B-doped Diamond Layered Structure (2011)
  • Author(s): T.Kawae, Y.Hori, T.Nakajima, H.Kawasaki, N.Tokuda, S.Okamura, Y.Takano, A.Morimoto
  • Journal Title: Electrochemical and Solid-State Letters Volume: 14
  • Peer Reviewed
• [Presentation] Structural and electrical properties of (Pr,Mn)-codoped BiFeO_3/B-doped diamond hetero structure (2011)
  • Author(s): T.Kawae, Y.Hori, T.Nakajima, H.Kawasaki, N.Tokuda, S.Okamura, Y.Takano, A.Morimoto
  • Organizer: Accepted to 9th International Meeting of the Pacific Rim Ceramic Societies conference(PACRIM9)
  • Place of Presentation: Cairns Convention Centre,(AustraliaCairns)
  • Year and Date: 2011-07-16
• [Presentation] BiFeO_3/(111)diamond 積層構造の作製と強誘電特性評価 (2011)
  • Author(s): 川崎寛樹、芳里有司、川江 健、中嶋宇史、徳田規夫、高野義彦、岡村総一郎、森本章治
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: (東日本大震災のため発表資料のDVD配布により発表成立)
  • Year and Date: 2011-03-24
• [Presentation] BiFeO3/(111)diamond積層構造の作製と強誘電特性評価 (2011)
  • Author(s): 川崎寛樹、芳里有司、川江健、中嶋宇史、徳田規夫、高野義彦、岡村総一郎、森本章治
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-24
• [Presentation] BiFeO_3/ボロン添加ダイヤモンド積層膜の作製と評価 (2010)
  • Author(s): 芳里有司、川崎健太郎、川江 健、高野義彦、森本章治
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
  • Year and Date: 2010-09-15
• [Presentation] BiFeO3/ボロン添加ダイヤモンド積層膜の作製と評価 (2010)
  • Author(s): 芳里有司、川崎健太郎、川江健、高野義彦、森本章治
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-15
• [Presentation] Structural and electrical properties of(Pr, Mn)-codoped BiFeO3/B-doped diamond heterostructure (2010)
  • Author(s): T.Kawae, Y.Hori, T.Nakajima, H.Kawasaki, N.Tokuda, S.Okamura, Y.Takano, A.Morimoto
  • Organizer: 9th International Meeting of the Pacific Rim Ceramic Societies conference(PACRIM9)
  • Place of Presentation: 豪州・ケアンズ
  • Year and Date: 2010-07-24