Development of ZnO-based Thin Film Transistors with Ultra-thin Al_2O_3 Films as Gate Dielectrics

• Project/Area Number: 21760234
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: University of Yamanashi
• Principal Investigator: MURANAKA Tsutomu 山梨大学, 大学院・医学工学総合研究部, 准教授 (20374788)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000); Fiscal Year 2011: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000); Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2009: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
• Keywords: 薄膜・量子構造 / 薄膜トランジスタ / MBE, エピタキシャル / 半導体物性 / 表面・界面物性 / デバイス設計・製造プロセス / MBE,エピタキシャル

Research Abstract

Ultra-thin Al_2O_3 films as high-k gate dielectric for ZnO-based thin film transistors were formed by using atomic oxygen treatments. The films were carefully characterized by X-ray photoelectron spectroscopy, X-ray reflectometry and scanning electron microscopy in order to investigate the details of surface oxidation process of the aluminum films. The oxidation process using the atomic oxygen treatment is found to be effective for formation of ultra-thin Al_2O_3 layers.

Research Products

• [Journal Article] Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition (2011)
  • Author(s): T. Matsumoto, K. Mizuguchi, T. Horii, S. Sano, T. Muranaka, Y. Nabetani, S. Hiraki, H. Furukawa, A. Fukasawa, S. Sakamoto, S. Hagihara, H. Kono, K. Kijima, O. Abe, K. Yashiro
  • Journal Title: Japanese Journal of Applied Physics Volume: Vol.50
  • NAID: 210000070524
  • Peer Reviewed
• [Journal Article] Effects of Ga Doping and Substrate Temperature on Electrical properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition (2011)
  • Author(s): T.Muranaka
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Issue: 5S2 Pages: 05FB13-05FB13
  • DOI: 10.1143/jjap.50.05fb13
  • NAID: 210000070524
  • Peer Reviewed
• [Journal Article] XRD characterization of ZnO layers grown on GaAs(111) B, c-plane and a-plane sapphire substrates (2010)
  • Author(s): T. Muranaka, T. Sakano, K. Mizuguchi, Y. Nabetani, T. Akitsu, T. Matsumoto, S. Hagihara, O. Abe, S. Hiraki, Y. Fujikawa
  • Journal Title: MBE physica status solidi(c) Volume: Vol.7, No.6 Pages: 1556-1558
  • Peer Reviewed
• [Journal Article] XRD characterization of ZnO layers grown on GaAs(111)B, c-plane and a-plane sapphire substrates by plasma-assisted MBE (2010)
  • Author(s): T.Muranaka
  • Journal Title: physica status solidi (c) Volume: 7 Pages: 1556-1558
  • Peer Reviewed
• [Journal Article] XRD characterization of ZnO layers grown on GaAs(111)B, c-plane and a-plane sapphire substrates by plasma-assisted MBE (2010)
  • Author(s): T.Muranaka
  • Journal Title: physica status solidi (c) (掲載決定)(未定)
  • Peer Reviewed
• [Presentation] ZnO透明導電膜の光学的評価 (2012)
  • Author(s): 佐野志保,堀井貴大,小柳津祥典,村中司,鍋谷暢一,松本俊,平木哲,宮沢節也,深沢明広,阪本慎吾
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-15
• [Presentation] PAD法による大面積基板上ZnO薄膜の特性 (2012)
  • Author(s): 宮下祐司,高所健太,水口慶一,佐野志保,堀井貴大,村中司,鍋谷暢一,松本俊,平木哲,宮沢節也,深沢明広,阪本慎吾
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-15
• [Presentation] ZnO TFTのドレイン電流DLTS測定 (2012)
  • Author(s): 森雄大,久保田優人,佐野志保,堀井貴大,村中司,鍋谷暢一,松本俊
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-15
• [Presentation] ZnO TFTのトレイン電流DLTS測定 (2012)
  • Author(s): 村中司
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京都新宿区
  • Year and Date: 2012-03-15
• [Presentation] PAD法による大面積基板上ZnO薄膜の特性 (2012)
  • Author(s): 村中司
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京都新宿区
  • Year and Date: 2012-03-15
• [Presentation] ZnO透明導電膜の光学的評価 (2012)
  • Author(s): 村中司
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京都新宿区
  • Year and Date: 2012-03-15
• [Presentation] PAD法による大面積基板上ZnO薄膜の特性 (2011)
  • Author(s): 宮下祐司,高所健太,水口慶一,佐野志保,堀井貴大,村中司,鍋谷暢一,松本俊,平木哲,宮沢節也,深沢明広,阪本慎吾
  • Organizer: 平成23年度多元系機能材料研究会年末講演会
  • Place of Presentation: 愛媛大学
  • Year and Date: 2011-12-09
• [Presentation] PAD法による大面積PC基板上ZnO薄膜の特性 (2011)
  • Author(s): 村中司
  • Organizer: 多元系機能材料研究会年末講演会
  • Place of Presentation: 愛媛県松山市
  • Year and Date: 2011-12-09
• [Presentation] GaドープZnO薄膜のラマン散乱 (2011)
  • Author(s): 佐野志保,堀井貴大,村中司,鍋谷暢一,松本俊,平木哲,宮沢節也,深沢明広,阪本慎吾,河野裕,木島一広,安部治
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学
  • Year and Date: 2011-09-02
• [Presentation] GaドープZnO薄膜のラマン散乱 (2011)
  • Author(s): 村中司
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 山形県山形市
  • Year and Date: 2011-09-02
• [Presentation] Nitrogen doping on ZnO films grown by plasma-assisted MBE and its effects to the transport properties of TFTs (2011)
  • Author(s): T. Muranaka, Y. Ushiyama, N. Marumo, T. Horii, S. Sano, K. Mizuguchi, Y. Sakurai, Y. Nabetani, T. Matsumoto
  • Organizer: 15th International Conference on II-VI Compounds
  • Place of Presentation: Mayan Riviera(メキシコ合衆国)
  • Year and Date: 2011-08-25
• [Presentation] Nitrogen doping on ZnO films grown by plasma-assisted MBE and its effects to the transport properties of TFTs (2011)
  • Author(s): T.Muranaka
  • Organizer: 15th International Conference on II-VI Compounds
  • Place of Presentation: リビエラ・マヤ(メキシコ)
  • Year and Date: 2011-08-25
• [Presentation] ZnO-TFTのI-V特性と深い準位の測定 (2010)
  • Author(s): 榊原章剛,森雄大,佐野志保,堀井貴大,村中司,鍋谷暢一,松本俊
  • Organizer: 平成22年度多元系機能材料研究会年末講演会
  • Place of Presentation: 千葉工業大学
  • Year and Date: 2010-11-19
• [Presentation] ZnO-TFTのI-V特性と深い準位の測定 (2010)
  • Author(s): 村中司
  • Organizer: 多元系機能材料研究会年末講演会
  • Place of Presentation: 千葉県習志野市
  • Year and Date: 2010-11-19
• [Presentation] Electrical properties of Gadoped ZnO transparent conducting films prepared at temperatures close to room temperature (2010)
  • Author(s): T. Matsumoto, K. Mizuguchi, T. Horii, S. Sano, T. Muranaka, Y. Nabetani, S. Hiraki, H. Furukawa, A. Fukasawa, S. Sakamoto, S. Hagihara, Y. Kono, K. Kijima, O. Abe, K. Yashiro
  • Organizer: 17th International Conference on Ternary and Multinary Compounds
  • Place of Presentation: Baku(アゼルバイジャン共和国)
  • Year and Date: 2010-09-28
• [Presentation] 低温成長GaドープZnO薄膜(2)-X線回折特性- (2010)
  • Author(s): 佐野志保,堀井貴大,村中司,鍋谷暢一,松本俊,平木哲,古川英明,深沢明広,坂本慎吾,萩原茂,河野裕,木島一広,安部治,八代浩二
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-14
• [Presentation] 低温成長GaドープZnO薄膜(1)-電気的特性- (2010)
  • Author(s): 堀井貴大,佐野志保,村中司,鍋谷暢一,松本俊,平木哲,古川英明,深沢明広,坂本慎吾,萩原茂,河野裕,木島一広,安部治,八代浩二
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-14
• [Presentation] 低温成長GaドープZnO薄膜(1)-電気的特性- (2010)
  • Author(s): 村中司
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎県長崎市
  • Year and Date: 2010-09-14
• [Presentation] 低温成長GaドープZnO薄膜(2)-X線回折特性- (2010)
  • Author(s): 村中司
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎県長崎市
  • Year and Date: 2010-09-14
• [Presentation] プラズマ支援堆積法によるZnO透明導電膜の低温成長 (2009)
  • Author(s): 水口慶一,宮下祐司,堀井貴大,佐野志保,榊原章剛,村中司,鍋谷暢一,松本俊,平木哲,古川英明,深沢明広,阪本慎吾,萩原茂,河野裕,木島一広,阿部治,八代浩二
  • Organizer: 平成21年度多元系機能材料研究会年末講演会
  • Place of Presentation: 鷲羽ハイランドホテル(岡山県倉敷市)
  • Year and Date: 2009-12-11
• [Presentation] プラズマ支援堆積法によるZnO透明導電膜の低温成長 (2009)
  • Author(s): 村中司
  • Organizer: 多元系機能材料研究会年末講演会
  • Place of Presentation: 岡山県倉敷市
  • Year and Date: 2009-12-11
• [Presentation] XRD characterization of ZnO layers grown on GaAs(111), sapphire c-plane and a-plane substrates by Plasma-Assisted MBE (2009)
  • Author(s): T. Muranaka, T. Sakano, K. Mizuguchi, Y. Nabetani, T. Akitsu, T. Matsumoto, S. Hagihara, O. Abe, S. Hiraki, Y. Fujikawa
  • Organizer: 14th International Conference on II-VI Compounds
  • Place of Presentation: St. Petersburg(ロシア連邦)
  • Year and Date: 2009-08-27
• [Presentation] XRD characterization of ZnO layers grown on GaAs(111), sapphire c-plane and a-plane substrates by Plasma-Assisted MBE (2009)
  • Author(s): T.Muranaka
  • Organizer: 14th International Conference on II-VI Compounds
  • Place of Presentation: サンクトペテルブルク(ロシア)
  • Year and Date: 2009-08-27
• [Remarks]
  • URL: http://www.es.yamanashi.ac.jp/research/index_html#muranaka