| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
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| Research Abstract |
The quasi-LPE(Liquid Phase Epitaxy) method, which has been proposed as a new MBE(Molecular Beam Epitaxy) growth of InN, was applied to the growth of InGaN. By controlling the phase separation occurred during the growth of InGaN, simple and reproducible growth of In(Ga) N/InGaN periodic structure and thick InGaN film was realized. This method was also developed to the growth of Mg-doping technique in order to obtain p-type materials.
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