Development of MBE growth technology of InN-based alloys using quasi-LPE method
Project/Area Number |
21760237
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Single-year Grants |
Research Field |
Electronic materials/Electric materials
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Research Institution | Kogakuin University (2011) Ritsumeikan University (2009-2010) |
Principal Investigator |
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Project Period (FY) |
2009 – 2011
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Project Status |
Completed (Fiscal Year 2011)
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Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
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Keywords | 半導体 / 分子線エピタキシー / 薄膜・量子構造 / 製作・評価技術 / 窒化物半導体 / 混晶 / 作製・評価技術 / 分子線エピタキシー法 |
Research Abstract |
The quasi-LPE(Liquid Phase Epitaxy) method, which has been proposed as a new MBE(Molecular Beam Epitaxy) growth of InN, was applied to the growth of InGaN. By controlling the phase separation occurred during the growth of InGaN, simple and reproducible growth of In(Ga) N/InGaN periodic structure and thick InGaN film was realized. This method was also developed to the growth of Mg-doping technique in order to obtain p-type materials.
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Report
(4 results)
Research Products
(78 results)
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[Journal Article] Mg doped InN and confirmation of free holes in InN2011
Author(s)
K.Wang, N.Millar, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.AgerIII
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Journal Title
Applied Physics Letters
Volume: 98
Related Report
Peer Reviewed
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[Presentation] Mg Doped InN and Search For Holes2010
Author(s)
K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.AgerIII, K.M.Yu, W.Walukiewicz
Organizer
The International Workshop on Nitride semiconductors (IWN2010)
Place of Presentation
Florida, USA
Year and Date
2010-09-22
Related Report
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[Presentation] Growth of InN and related alloys using droplet elimination by radical beam irradiation2010
Author(s)
Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.AgerIII, K.M.Yu, W.Walukiewicz
Organizer
The International Workshop on Nitride semiconductors (IWN2010)
Place of Presentation
Florida, USA(招待講演)
Year and Date
2010-09-21
Related Report
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[Presentation] Evidence of Free Holes in Mg Doped InN2010
Author(s)
K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
Organizer
Third International Symposium on Growth of III-Nitrides (ISGN-3)
Place of Presentation
Montpellier, France
Year and Date
2010-07-05
Related Report
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[Presentation] Undoped and Mg-doped InN grown using droplet elimination by radical-beam irradiation method2010
Author(s)
T.Yamaguchi, K.Wang, R.Iwamoto, N.Miller, M.Mayer, J.W.Ager III, K.M.Yu, W.Walukiewicz, T.Araki, Y.Nanishi
Organizer
The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
Place of Presentation
Peking, China
Year and Date
2010-05-18
Related Report
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