| Project/Area Number |
21760241
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
IROKAWA Yoshihiro National Institute for Materials Science, 半導体材料センター, 主任研究員 (90394832)
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| Co-Investigator(Renkei-kenkyūsha) |
NAKANO Yoshitaka 中部大学, 総合工学研究所, 准教授 (60394722)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2009: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
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| Keywords | 電気・電子材料 / 窒化物半導体 / ヘテロ接合 / AlGaN/GaN / ヘテロ構造 / AlGaN / GaN / ショットキー構造 |
|---|
| Research Abstract |
Nitride-based materials and devices were fabricated and characterized in order to realize power devices with low loss and structure the associated semiconductor physics. The obtained results are described as follows. First, the correlation between defects in the AlGaN/GaN hetero-interfaces and device performances was characterized using deep level optical spectroscopy. As a result, malfunction of devices was found to relate to particular defect levels in the AlGaN/GaN hetero-interfaces. Second, influence of hydrogen on the device performances was characterized. As a result, property of the metal/semiconductor interfaces was found to play a critical role in device performances.
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