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Probing a charge state of dopant atoms in silicon surfaces

Research Project

Project/Area Number 21760242
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionNational Institute for Materials Science

Principal Investigator

SAGISAKA Keisuke  National Institute for Materials Science, ナノ計測センター, 主任研究員 (70421401)

Project Period (FY) 2009 – 2010
Project Status Completed (Fiscal Year 2010)
Budget Amount *help
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2009: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Keywordsシリコン / ドーパント / 走査トンネル顕微鏡 / リン / 電子散乱
Research Abstract

In order to investigate charging states of individual dopant (phosphorus) atoms in silicon surfaces, a new method to evaporate phosphorus on the Si(100) surface was suggested and phosphorus adsorbed on the surface was studied. Phosphorus molecules were successfully evaporated from a small piece of an indium phosphide wafer heated to 400C. It was found by scanning tunneling microscopy (STM) observations that there are five different structures in adsorption of phosphorus molecules on the Si(100) surface. Those physical and electronic structures were identified by bias-dependent STM imaging and simulations based on density functional theory. Furthermore, phosphorus molecules were successfully incorporated in the silicon surface by heating the sample at 500C.

Report

(3 results)
  • 2010 Annual Research Report   Final Research Report ( PDF )
  • 2009 Annual Research Report
  • Research Products

    (12 results)

All 2011 2010 Other

All Journal Article (2 results) (of which Peer Reviewed: 2 results) Presentation (9 results) Remarks (1 results)

  • [Journal Article] Silicon adatom switching and manipulation on Si(111)-7x72010

    • Author(s)
      Keisuke Sagisaka, Alexander Luce, Daisuke Fujita
    • Journal Title

      Nanotechnology 4

      Pages: 45707-45707

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Silicon adatom switching and manipulation on Si(111)-7x72010

    • Author(s)
      K.Sagisaka, A.Luce, D.Fujita
    • Journal Title

      Nanotechnology 21

      Pages: 45707-45707

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Presentation] Si(100)表面に吸着したリン分子のSTM観察2011

    • Author(s)
      鷺坂恵介、ミハエル・マルツ、藤田大介、デビット・ボウラー
    • Organizer
      日本物理学会
    • Place of Presentation
      新潟大学(新潟市)
    • Year and Date
      2011-03-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] Si(100)表面に吸着したリン分子のSTM観察2011

    • Author(s)
      鷺坂恵介、ミハエル・マルツ、藤田大介、デビッド・ボウラー
    • Organizer
      日本物理学会第66回年次大会
    • Place of Presentation
      新潟大学、新潟市
    • Related Report
      2010 Final Research Report
  • [Presentation] Si(100)表面に吸着したリン分子のSTM観察2010

    • Author(s)
      鷺坂恵介、ミハエル・マルツ、藤田大介、デビット・ボウラー
    • Organizer
      NIMSナノ計測センター研究成果発表会
    • Place of Presentation
      物質・材料研究機構(つくば市)
    • Year and Date
      2010-12-07
    • Related Report
      2010 Annual Research Report
  • [Presentation] Adsorption of phosphorus atoms on the Si(100) surface2010

    • Author(s)
      鷺坂恵介、藤田大介
    • Organizer
      18th International Vacuum Congress
    • Place of Presentation
      Beijing International Convention Center(北京)
    • Year and Date
      2010-08-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] Manipulation of silicon adatom and electronic structure on Si(111)-7x72010

    • Author(s)
      鷺坂恵介、藤田大介
    • Organizer
      IBM-NIMS symposium on characterization and manipulation at the atomic scale
    • Place of Presentation
      エポカル(つくば市)
    • Year and Date
      2010-06-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] A study of the Si(001) surface by low temperature scanning tunneling microscopy2010

    • Author(s)
      鷺坂恵介
    • Organizer
      International Workshop on Surface of Quasicrystals
    • Place of Presentation
      物質・材料研究機構(つくば市)
    • Year and Date
      2010-06-11
    • Related Report
      2010 Annual Research Report
  • [Presentation] Adsorption of phosphorus atoms on the Si(100) surface2010

    • Author(s)
      Keisuke Sagisaka, Daisuke Fujita
    • Organizer
      IVC18, International Convention Center
    • Place of Presentation
      Beijing, China
    • Related Report
      2010 Final Research Report
  • [Presentation] Manipulation of silicon adatoms and electronic structures on Si(111)-7x72010

    • Author(s)
      Keisuke Sagisaka
    • Organizer
      IBM-NIMS symposium on characterization and manipulation at the atomic scale
    • Place of Presentation
      Epocal Tsukuba
    • Related Report
      2010 Final Research Report
  • [Presentation] A study of the Si(001) surface by scanning tunneling microscopy2010

    • Author(s)
      Keisuke Sagisaka
    • Organizer
      International workshop on surface of quasi crystals
    • Place of Presentation
      NIMS Tsukuba
    • Related Report
      2010 Final Research Report
  • [Remarks] ホームページ等

    • URL

      http://www.nims.go.jp/nanophys6/index.html

    • Related Report
      2010 Final Research Report

URL: 

Published: 2009-04-01   Modified: 2016-04-21  

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