Probing a charge state of dopant atoms in silicon surfaces
| Project/Area Number |
21760242
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
SAGISAKA Keisuke National Institute for Materials Science, ナノ計測センター, 主任研究員 (70421401)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2009: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
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| Keywords | シリコン / ドーパント / 走査トンネル顕微鏡 / リン / 電子散乱 |
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| Research Abstract |
In order to investigate charging states of individual dopant (phosphorus) atoms in silicon surfaces, a new method to evaporate phosphorus on the Si(100) surface was suggested and phosphorus adsorbed on the surface was studied. Phosphorus molecules were successfully evaporated from a small piece of an indium phosphide wafer heated to 400C. It was found by scanning tunneling microscopy (STM) observations that there are five different structures in adsorption of phosphorus molecules on the Si(100) surface. Those physical and electronic structures were identified by bias-dependent STM imaging and simulations based on density functional theory. Furthermore, phosphorus molecules were successfully incorporated in the silicon surface by heating the sample at 500C.
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Report
(3 results)
Research Products
(12 results)
