Study of the fabrication and properties of the integration between Si-MEMS structure and nitride electronic and photonic devices
| Project/Area Number |
21760244
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tohoku University |
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Principal Investigator |
HU FANGREN 東北大学, 大学院・工学科, 助教 (50396545)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2009: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | GaN / 結晶成長 / Si / センサ / 微細加工 / Si-MEMS / 光電子デバイス / 窒化物半導体 |
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| Research Abstract |
Nitride semiconductor quantum-well, quantum dots and light-emitting diode structure were deposited on the flat Si, Si microstructure and Si-MEMS structure. High quantum efficiency and high emission were observed. Also, AlGaN/GaN HEMT was fabricated and typical transistor I/V property was obtained. Furthermore, micro pressure transducer was fabricated with the AlGaN/GaN HEMT by Si-micromaching process and the related properties were evaluated. The characteristics of the fabricated transistors were measured.
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Report
(4 results)
Research Products
(14 results)
