Study of the fabrication and properties of the integration between Si-MEMS structure and nitride electronic and photonic devices

• Project/Area Number: 21760244
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: Tohoku University
• Principal Investigator: HU FANGREN 東北大学, 大学院・工学科, 助教 (50396545)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2009: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
• Keywords: GaN / 結晶成長 / Si / センサ / 微細加工 / Si-MEMS / 光電子デバイス / 窒化物半導体

Research Abstract

Nitride semiconductor quantum-well, quantum dots and light-emitting diode structure were deposited on the flat Si, Si microstructure and Si-MEMS structure. High quantum efficiency and high emission were observed. Also, AlGaN/GaN HEMT was fabricated and typical transistor I/V property was obtained. Furthermore, micro pressure transducer was fabricated with the AlGaN/GaN HEMT by Si-micromaching process and the related properties were evaluated. The characteristics of the fabricated transistors were measured.

Research Products

• [Journal Article] III-Nitride grating grown on freestanding HfO_2 gratings (2011)
  • Author(s): Y. J. Wang, T. Wu, F. R. Hu, Y. Kanamori, H. B. Zhu and K. Hane
  • Journal Title: Nanoscale Research Letters Volume: 6 Pages: 497-497
  • Peer Reviewed
• [Journal Article] Comb-drive GaN micro-mirror on a GaN-on-silicon platform (2011)
  • Author(s): Y. J. Wang, T. Sasaki, T. Wu, F. R. Hu and K. Hane
  • Journal Title: Journal of Micromechanics and Microengineering Volume: Vol.21(3) Pages: 35012-35012
  • Peer Reviewed
• [Journal Article] Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy (2011)
  • Author(s): Y. J. Wang, F. R. Hu and K. Hane
  • Journal Title: Semiconductor Science and Technology Volume: Vol.26(4) Pages: 45015-45015
  • Peer Reviewed
• [Journal Article] Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy (2011)
  • Author(s): Y. J. Wang, F. R. Hu and K. Hane
  • Journal Title: Nanoscale Research Letters Volume: Vol.6(1) Pages: 117-117
  • Peer Reviewed
• [Journal Article] Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy (2011)
  • Author(s): Y.J.Wang, F.R.Hu, K.Hane
  • Journal Title: Nanoscale Research Letters Volume: 6 Pages: 117-117
  • Peer Reviewed
• [Journal Article] Fabrication and characterization of subwavelength nanostructures on freestanding GaN slab (2010)
  • Author(s): Y. J. Wang, F. R. Hu, Y. Kanamori, H. Sameshima and K. Hane
  • Journal Title: Optics Express Volume: 18(3) Pages: 2940-2945
  • NAID: 120003728432
  • Peer Reviewed
• [Journal Article] Fabrication and characterization of freestanding circular GaN gratings (2010)
  • Author(s): Y. J. Wang, F. R. Hu, H. Sameshima and K. Hane
  • Journal Title: Optics Express Volume: Vol.18(2) Pages: 773-779
  • NAID: 120003728497
  • Peer Reviewed
• [Journal Article] Freestanding GaN slab fabricated on patterned silicon on an insulator substrate (2010)
  • Author(s): Y. J. Wang, F. R. Hu and K. Hane
  • Journal Title: Journal of Micromechanics and Microengineering Volume: Vol.20(2) Pages: 27001-27001
  • Peer Reviewed
• [Journal Article] Large area, freestanding GaN nanocolumn membrane with bottom subwavelength nanostructure (2010)
  • Author(s): Y. J. Wang, F. R. Hu, Y. Kanamori, T. Wu and K. Hane
  • Journal Title: Optics Express Volume: Vol.18(6) Pages: 5504-5511
  • NAID: 120003728410
  • Peer Reviewed
• [Journal Article] Large area, freestanding GaN nanocolumn membrane with bottom subwavelength nanostructure (2010)
  • Author(s): Yongjin Wang, Fangren Hu, Yoshiaki Kanamori, Tong Wu, Kazuhiro Hane
  • Journal Title: Optics Express Volume: 18 Pages: 5504-5511
  • NAID: 120003728410
  • Peer Reviewed
• [Journal Article] Freestanding circular GaN grating fabricated by fast-atom beam etching (2009)
  • Author(s): Y. J. Wang, F. R. Hu, M. Wakui and K. Hane
  • Journal Title: Applied Physics A-Materials Sciences & Processing Volume: Vol.97 Pages: 39-43
  • Peer Reviewed
• [Journal Article] Freestanding GaN Resonant Gratings at Telecommunication Range (2009)
  • Author(s): Y. J. Wang, F. R. Hu, M. Wakui and K. Hane
  • Journal Title: IEEE Photonics Technology Letters Volume: Vol.21, 17 Pages: 1184-1186
  • Peer Reviewed
• [Journal Article] GaN-based nitride semiconductor films deposited on nitrified HfO2/Si substrate by molecular beam epitaxy (2009)
  • Author(s): F. R. Hu, H. Sameshima, M. Wakui, R. Ito and K. Hane
  • Journal Title: Journal of Crystal Growth Volume: Vol.311, 10 Pages: 2996-2999
  • Peer Reviewed
• [Presentation] Monolithically integration of GaN light-emitting diode and Si substrate with AlN/GaN superlattice as interlayer (2009)
  • Author(s): F.R.Hu, M.Wakui, H.Sameshima, R.Ito, K.Hane
  • Organizer: 2009 JSME-IIP/ASME-ISPS Joint Conference on Micromechatronics for Information and Precision Equipment(MIPE 2009)
  • Place of Presentation: Tsukuba International Congress Center, Ibaraki, Japan