Nanoscale measurements of ferroelectric thin films using scanning nonlinear dielectric microscopy for next-generation ultrahigh-density data storage devices
| Project/Area Number |
21760245
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2011: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2009: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Keywords | 走査プローブ顕微鏡 / データストレージ / 誘電体物性 / 走査型プローブ顕微鏡 |
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| Research Abstract |
Several experiments of nanoscale domain switching on ferroelectric thin films were conducted in order to develop ferroelectric thin films for high-density data storage. Major achievements of this study are as follows :(1)Artificial small nanodomain dots with the diameter of approximately 20 nm were successfully formed on an epitaxial LiTaO_3 thin film prepared by MOCVD method. A domain dot array with the density of 1. 6 Tbit/inch^2 was also formed on the same thin film.(2)Intermittent contact scanning nonlinear dielectric microscopy (IC-SNDM)was developed for study on nanoscale domain switching on ferroelectric thin films. The reproducibility of measurements was improved in comparison to a conventional SNDM operated under contact mode.(3)Single track read/write operations were demonstrated using our HDD-type ferroelectric data storage testing system.
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Report
(4 results)
Research Products
(11 results)
