Research Project
Grant-in-Aid for Young Scientists (B)
Er-doped silicon oxide films (SiOx:Er) were deposited under various conditions and their optical and structural characteristics were evaluated. It was experimentally demonstrated that the composition (Si:O:Er) and band-gap energy of SiOx:Er films can be controlled by the sputtering condition of gas and/or temperature. A prototype of SiOx:Er optical emitter was fabricated and its PL characteristic was evaluated. It was demonstrated that the SiOx:Er film is emitted at the wavelength of 1534nm.
All 2011 2010 2009
All Journal Article (2 results) Presentation (6 results)
J.Lightwave Technol. vol.27, no.7
Pages: 864-870
J.Lightwave Technol. vol.27, no.10
Pages: 1315-1319