Study of Erbium-Doped Silicon Oxide Film for Optical Emitter
| Project/Area Number |
21760249
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Utsunomiya University |
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Principal Investigator |
YODA Hidehiko Utsunomiya University, 工学研究科, 准教授 (30312862)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2009: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | シリコン / 光エミッタ / シリコン酸化膜 |
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| Research Abstract |
Er-doped silicon oxide films (SiOx:Er) were deposited under various conditions and their optical and structural characteristics were evaluated. It was experimentally demonstrated that the composition (Si:O:Er) and band-gap energy of SiOx:Er films can be controlled by the sputtering condition of gas and/or temperature. A prototype of SiOx:Er optical emitter was fabricated and its PL characteristic was evaluated. It was demonstrated that the SiOx:Er film is emitted at the wavelength of 1534nm.
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Report
(3 results)
Research Products
(8 results)
