| Project/Area Number |
21760258
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Shibaura Institute of Technology |
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Principal Investigator |
ISHIKAWA Hiroyasu Shibaura Institute of Technology, 工学部, 准教授 (20303696)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2009: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Keywords | 結晶成長 / 電子デバイス・機器 / ナノ材料 / マイクロ・ナノデバイス / 窒化ガリウム(GaN) / 有機金属気相成長(MOCVD) / 球状Si / ドロップレット / 窒化ガリウムインジウム(GaInN) / 多重量子井戸 |
|---|
| Research Abstract |
Novel technology based on GaN-on-silicon-sphere were investigated for high power and better light extraction efficiency GaN-based LEDs. Using Si (100) substrates as support submounts, silicon spheres could be fixed and unfixed on the submounts with low-melting-point lead glass. Moreover, correlation between luminescence characteristics and nanostructures in GaInN MQWs on Si substrates was investigated for improved performance. There was a strong correlation between strong luminescence characteristics and their nano- and micro-structures.
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