| Project/Area Number |
21760267
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
LIAO Meiyong National Institute for Materials Science, センサ材料センター, 主任研究員 (70528950)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2009: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 物理センサー / マイクロマシン / ダイヤモンド / マイクロ・ナノマシン / 応力センサ / スイッチ / 金属-圧電体-絶縁体-半導体電界効果トランジスタ |
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| Research Abstract |
In this Project, we proposed a novel device concept such as metal-piezoelectric-insulator-semiconductor field-effect transistor (MPIS)-FET for pressure sensors by using p-type diamond. During the period from 2009-2010, we developed various insulators such as Al_2O_3 and CaF_2 for the integration of Pb(Zr_<0.52>,Ti_<0.48>)O_3 (PZT) on diamond. We studied the effect of insulator on the crystallographic orientation, the remanent polarization of the PZT films. On the other hand, we developed the method for the fabrication of suspended structures of single crystal diamond. Finally, we evaluated the electric properties of the MPIS capacitor and the FET pressure sensor structures.
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