Development of cryogenic LSI based on an FD-SOI-CMOS technology for Terahertz high sensitive sensors
| Project/Area Number |
21760321
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Measurement engineering
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| Research Institution | Japan Aerospace Exploration Agency |
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Principal Investigator |
NAGATA Hirohisa Japan Aerospace Exploration Agency, 宇宙科学研究所, 研究員 (20399299)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2009: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Keywords | 赤外線天文学 / 極低温読み出し回路 / 光伝導型検出器 / 完全空乏型SOI-CMOS / テラヘルツ / 高感度計測 / 科学衛星 |
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| Research Abstract |
I addressed development of analog integrated circuits which can operate around 2 Kelvin (K) to realize a large formatted high-sensitive image sensor in far-infrared wavelength region. In this study, I focused on a fully-depleted (FD) -SOI-CMOS process for this application and experimentally confirmed that the FD-SOI-CMOSs kept good static performance even at 2 K and that the noise performance was within an acceptable range for the application. Subsequently, I designed and fabricated basic circuits like operational amplifiers or flip-flops with the same process. These circuits worked as expected. These result mean that the technology to develop fundamental circuits has been established with the FD-SOI-CMOSs.
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Report
(3 results)
Research Products
(19 results)
