| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2009: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Research Abstract |
Interface magnetism and structure inα-Cr_2O_3/ferromagnetic thin film were investigated. It is fount that for a high perpendicular exchange bias, the similar in-plane atom arrangement between α-Cr_2O_3 and ferromagnetic layer and the crystalline quality ofα-Cr_2O_3were important. The perpendicular exchange bias of approximately 0.3 erg/cm^2was achieved which is a highest value among the reported values. On the basis of the obtained results, it was shown thatα-Cr_2O_3was a promising material for the rare-metal free non-volatile memory with low power consumption.
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