Elucidation of mechanism of relaxor ferroelectrics -polar nano region and random field-
| Project/Area Number |
21760524
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2009: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Keywords | リラクサー / 強誘電体 / 極性ナノ領域(PNR) / 化学的秩序領域(COR) / ランダム場 / 電子顕微鏡 / 幾何学的位相解析 / 歪みマッピング / 極性ナノ領域 / 構造遷移層 / ドメイン / 薄膜 |
|---|
| Research Abstract |
The deposition condition for the epitaxial growth of Pb(Mg_<1/3>Nb_<2/3>)O_3(PMN) on SrTiO_3(STO) substrate was conducted. Epitaxial PMN thin film was obtained. The aberration-corrected transmission electron microscopy (HRTEM) analysis has elucidated the structure of PMN thin films by the atomic-resolution. In particular, Pb-O atomic columns randomly displaced in <111> direction. The result indicates that the direct observation of the characteristic atomic displacement by the random field from the B-site randomness. The HRTEM and the related strain mapping has elucidated that the detailed structure of the polar nano region (PNR).
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Report
(3 results)
Research Products
(71 results)
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[Journal Article] Antiferrodistortive Structural Phase Transition in Compressively-strained Epitaxial SrTiO_3 Film Grown on (La, Sr)(Al, Ta)O_3 Substrate2010
Author(s)
T. Yamada, T. Kiguchi, A.K. Tagantsev, H. Morioka, T. Iijima, H. Ohsumi. Kimura, M. Osada, N. Setter, H. Funakubo
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Journal Title
Integrated Ferroelectrics
Volume: 115
Pages: 57-62
Related Report
Peer Reviewed
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