Band structure controlling of graphene studied by ultrahigh-resolution angle-resolved photoemission spectroscopy
| Project/Area Number |
21840009
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Condensed matter physics II
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| Research Institution | Tohoku University |
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Principal Investigator |
SUGAWARA Katsuaki 東北大学, 原子分子材料科学高等研究機構, 助教 (70547306)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥2,704,000 (Direct Cost: ¥2,080,000、Indirect Cost: ¥624,000)
Fiscal Year 2010: ¥1,287,000 (Direct Cost: ¥990,000、Indirect Cost: ¥297,000)
Fiscal Year 2009: ¥1,417,000 (Direct Cost: ¥1,090,000、Indirect Cost: ¥327,000)
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| Keywords | 物性実験 / ナノ材料 / 表面・界面物性 |
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| Research Abstract |
Recently, monolayer graphite (graphene)have attracted much attention because it shows various interesting physical properties. However, the detailed electronic responsible for the anomalous physical properties in graphene depended the number of layers has not been well understood yet. To elucidate the anomalous physical properties of graphene, we have performed high-resolution angle-resolved photoemission spectroscopy (ARPES)of monolayer and bilayer graphene on SiC (0001). We clearly observed the band structure deviated from ideal graphene on both monolayer and bilayer graphene growth on SiC (0001). These experimental results are explained in terms of the buffer layer.
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Report
(3 results)
Research Products
(28 results)
