Stacking faults in compound semiconductor nanowires grown by selective-area vapor-phase epitaxy : A first-principles study
| Project/Area Number |
21860001
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Hokkaido University |
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Principal Investigator |
KOGA Hiroaki Hokkaido University, 量子集積エレクトロニクス研究センター, 助教 (80519413)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2010: ¥871,000 (Direct Cost: ¥670,000、Indirect Cost: ¥201,000)
Fiscal Year 2009: ¥1,339,000 (Direct Cost: ¥1,030,000、Indirect Cost: ¥309,000)
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| Keywords | ナノ材料 / 結晶成長 / 表面再構成 / 第一原理計算 / ガリウムヒ素 |
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| Research Abstract |
This theoretical study examined the atomic structure of the surface of GaAs, a substance typically used in III-V semiconductor nanowires. Highly reliable calculations (based on first-principles methods) found that the earlier structural models of the high-temperature phase (√19 x √19 phase) are in fact unstable and insufficient. A new model was built and its validity confirmed. Furthermore, the effect of such surface structures, as well as that of the introduction of other group-V elements, on the nano-scale structure of GaAs was predicted.
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Report
(2 results)
Research Products
(7 results)
