| Project/Area Number |
21860017
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | The University of Tokyo |
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Principal Investigator |
TANABE Katsuaki The University of Tokyo, ナノ量子情報エレクトロニクス研究機構, 特任助教 (60548650)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥2,457,000 (Direct Cost: ¥1,890,000、Indirect Cost: ¥567,000)
Fiscal Year 2010: ¥1,235,000 (Direct Cost: ¥950,000、Indirect Cost: ¥285,000)
Fiscal Year 2009: ¥1,222,000 (Direct Cost: ¥940,000、Indirect Cost: ¥282,000)
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| Keywords | 量子ドット / 半導体レーザ / シリコンフォトニクス / ウェハ貼り合わせ / 化合物半導体 / レーザ / 光集積回路 / ナノテクノロジー / シリコン / ヒ化ガリウム / フォトルミネッセンス / ヒ化インジウム |
|---|
| Research Abstract |
We have demonstrated the world's first electrically pumped telecommunication-band quantum dot laser on a silicon substrate as a basis of photonic integrated circuits for next-generation low-power-consumption, high-speed computation and communication. We have also revealed the function of the metal thin film mediating the compound semiconductor quantum dot layer and the silicon substrate not only to enhance interfacial mechanical stability and electrical conductivity but also to suppress optical leakage from the laser cavity into the silicon substrate through electromagnetic calculations.
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