| Project/Area Number |
21860061
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagoya University (2010)
Hiroshima University (2009) |
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Principal Investigator |
MAKIHARA Katsunori Nagoya University, 工学研究科, 助教 (90553561)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥2,483,000 (Direct Cost: ¥1,910,000、Indirect Cost: ¥573,000)
Fiscal Year 2010: ¥1,209,000 (Direct Cost: ¥930,000、Indirect Cost: ¥279,000)
Fiscal Year 2009: ¥1,274,000 (Direct Cost: ¥980,000、Indirect Cost: ¥294,000)
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| Keywords | Si量子ドット / Ge量子ドット / エレクトロルミネッセンス / LPCVD / 積層構造 / 熱プラズマジェット / Ptナノドット / フローティングゲート / メモリ |
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| Research Abstract |
We have demonstrated self-assembling formation of one-dimensionally aligned Si-QDs by selective growth of Ge on pre-grown Si-QDs by LPCVD, in-situ oxidation, subsequent thermal desorption of Ge oxide and deposition of Si-QDs, and applied them to an active layer of light emitting diodes with a semitransparent Au gate. Under forward bias conditions over a threshold bias for LEDs on n-Si (100) substrate, a stable EL was observed in the near-infrared region at room temperature. Notice that the self-aligned Si-QDs enhance the emission intensity compared with the 2-fold stacking structure of the Si-QDs, with a result that the self-aligned structure is effective to increase recombination efficiency in EL. In addition, the formation of Pt-NDs by using the thermal plasma jet annealing of ultra-thin Pt films deposited on SiO_2 was successfully demonstrated without any extra heating. The millisecond rapid thermal annealing of ultra-thin metal films deposited on SiO_2 by using a thermal plasma jet is a very promising technique for the low temperature fabrication of metallic nanodots that can serve as charge storage nodes on SiO_2 layers.
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