| Project/Area Number |
21860062
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hiroshima University |
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Principal Investigator |
OHTA Akio Hiroshima University, 大学院・先端物質科学研究科, 研究員 (10553620)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥2,626,000 (Direct Cost: ¥2,020,000、Indirect Cost: ¥606,000)
Fiscal Year 2010: ¥1,235,000 (Direct Cost: ¥950,000、Indirect Cost: ¥285,000)
Fiscal Year 2009: ¥1,391,000 (Direct Cost: ¥1,070,000、Indirect Cost: ¥321,000)
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| Keywords | 抵抗変化型メモリ / メモリデバイス / 絶縁膜技術 / 光電子分光 / 化学結合状態分析 |
|---|
| Research Abstract |
The chemical bonding features in TiO_2-based Resistance Random Access Memory (ReRAM) after resistance change have been studied to gain a better understanding of the mechanism of resistance switching. For the Pt/TiO_2/Pt structure after resistance switching, the oxidation of Pt electrode at low resistance state (LRS) and the reduction of this PtO_x at high resistance state (HRS) were observed by hard X-ray photoelectron spectroscopy. The result suggests that generation of oxygen vacancies in Ti-oxide matrix is responsible for the formation of conductive pass resulting in LRS and that repeatable red-ox reaction at the Pt/TiO_2 interface plays an important role on resistance switching behavior. To change in the oxide network and to reduce the oxygen content in TiO_2, tri-valent Y ions were added into the oxide matrix of quadri-valent Ti ions. In Au/TiY_xO_y/Pt structures it has been demonstrated that the variations in resistance switching voltages are markedly suppressed by the Y_2_O3 addition into TiO_2.
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