Grading of silicon isotope thin films using localized hydrogen functionalities for quantum computing

• Project/Area Number: 21H01808
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 29020:Thin film/surface and interfacial physical properties-related
• Research Institution: Nagoya University
• Principal Investigator: MIYAMOTO Satoru 名古屋大学, 工学研究科, 特任准教授 (70709097)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Project Status: Completed (Fiscal Year 2023)
• Budget Amount: ¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000); Fiscal Year 2023: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000); Fiscal Year 2022: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000); Fiscal Year 2021: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
• Keywords: シリコン / 半導体 / 同位体 / 局在水素 / 量子計算 / 同位体工学 / 水素

Outline of Research at the Start

本研究では、水素局在機能を利用した独自薄膜形成技術を新たに提案し、シリコンゲルマニウム下地層における効率的な歪み緩和と極限的な界面傾斜抑制を同時達成することで、量子計算用基板材料としてのシリコン同位体薄膜の飛躍的な高性能化・高品質化を実現する。この過程において、その場観察技術を適用したハイスループット実験という新たな方法論に加え、同位体制御技術を援用した水素局在状態の直接可視化に挑戦し、その機能発現要因の解明を進める。

Outline of Final Research Achievements

We have developed a methodology and fundamental technology for interface control using localized hydrogens in silicon isotope thin films that implement silicon-based qubits. We have succeeded in developing an efficient condition search method by process measurement of hydrogen incorporation and desorption, highly sensitive detection and precise evaluation of hydrogen cluster defects with isotope engineering, and an apparatus capable of room-temperature evaluation of electrical noise originating from device interface. We also verified the qubit performance of valley separation using isotopically engineered silicon thin films as quantum platforms.

Academic Significance and Societal Importance of the Research Achievements

水素プロセス挙動のハイスループット計測、高感度な水素検出が可能な質量分析標準、デバイス界面性能の室温評価装置など、同位体薄膜の界面制御に必要な計測技術として高い有用性を示す。半導体産業レベルで広く利用される局在水素による欠陥制御工学の学理構築と、シリコン同位体薄膜の量子計算基板の性能を引き上げる技術基盤として学術的および社会的に意義がある。

Research Products

• [Int'l Joint Research] Seoul National University(韓国)
• [Presentation] Effect of localized hydrogen on crystal tilting in strained SiGe substrates (2024)
  • Author(s): Y. Yoneyama, S. Miyamoto, and N. Usami
  • Organizer: 2024 Korea-Japan PV Joint Workshop
  • Int'l Joint Research
• [Presentation] Defect engineering for interface control of Si-qubit integrated layers (2023)
  • Author(s): S. Miyamoto, M. Kano, Y. Kurokawa, and N. Usami
  • Organizer: Silicon Quantum Electronics Workshop 2023
  • Int'l Joint Research
• [Presentation] Design investigations of devices and circuits for reflectometry-based defect assessment in Si quantum platforms (2023)
  • Author(s): K. Masuda, N. Usami, and S. Miyamoto
  • Organizer: Silicon Quantum Electronics Workshop 2023
  • Int'l Joint Research
• [Presentation] Atom-probe tomographic study of localized hydrogen functionalities in silicon-based thin-film heterostructures (2023)
  • Author(s): S. Miyamoto, K. Inoue, Y. Shimizu, M. Kano, N. Usami, T. Yokoi, and Y. Nagai
  • Organizer: GIMRT Joint International Symposium on Radiation Effects in Materials and Actinide Science (GIMRT-REMAS2023)
  • Int'l Joint Research
• [Presentation] SiGe薄膜における歪み緩和と結晶傾斜への水素局在効果 (2023)
  • Author(s): 加納 光樹, 宮本 聡, 黒川 康良, 宇佐美 徳隆
  • Organizer: 2023年春季 第70回応用物理学会学術講演会
• [Presentation] Functionalization of Localized Hydrogens at Isotopically Engineered Silicon Hetero-Interface (2022)
  • Author(s): S. Miyamoto and N. Usami
  • Organizer: 2nd International Symposium “Hydrogenomics”
  • Int'l Joint Research / Invited
• [Presentation] 多接合太陽電池の普及を加速する最新技術II～印刷と焼成による擬似基板材料の非真空高速成長～ (2022)
  • Author(s): 宮本 聡
  • Organizer: 日本学術振興会第R032 委員会第 8 回研究会「太陽電池結晶素材の今」
  • Invited
• [Presentation] Hydrogen defect clustering in strained SiGe host matrixes (2022)
  • Author(s): M. Kano, S. Miyamoto, Y. Kurokawa, and N. Usami
  • Organizer: The 22nd International Vacuum Congress (IVC-22)
  • Int'l Joint Research
• [Presentation] Atom-probe tomographic study of localized hydrogen functionalities in silicon-based thin-film heterostructures (2022)
  • Author(s): S. Miyamoto
  • Organizer: GIMRT Joint International Symposium on Radiation Effects in Materials and Actinide Science (GIMRT-REMAS2022)
  • Int'l Joint Research / Invited
• [Presentation] ゲート制御Si-MOSデバイスにおける非平衡ダイナミクスと電荷雑音評価 (2022)
  • Author(s): 佐藤 克哉，宮本 聡，宇佐美 徳隆
  • Organizer: 2022年春季 第69回応用物理学会学術講演会
• [Presentation] Isotopically Engineered Silicon Testbeds for Advanced CMOS and Quantum Information (2021)
  • Author(s): S. Miyamoto, N. Usami, and K. M. Itoh
  • Organizer: 239th ECS Meeting
  • Int'l Joint Research / Invited
• [Presentation] アドバンスドCMOSのための同位体援用アトムプローブ解析とTEMトラッキング観察 (2021)
  • Author(s): 宮本 聡
  • Organizer: 日本顕微鏡学会 第77回学術講演会
  • Invited
• [Presentation] Isotope Engineering and Nanoscale Imaging for Scaling Silicon Quantum Technology (2021)
  • Author(s): S. Miyamoto, K. M. Itoh, and N. Usami
  • Organizer: The 22nd International Union of Materials Research Societies International Conference in Asia (IUMRS-ICA 2021)
  • Int'l Joint Research / Invited
• [Presentation] Atom-probe tomographic study of localized hydrogen functionalities in silicon-based thin-film heterostructures (2021)
  • Author(s): S. Miyamoto, Y. Shimizu, M. Kano, K. Inoue, N. Usami, and Y. Nagai
  • Organizer: GIMRT Joint International Symposium on Radiation Effects in Materials and Actinide Science (GIMRT-REMAS2021)
  • Int'l Joint Research
• [Presentation] Microwave photoconductivity decay under gate-bias application to detect charge traps in Si-MOS devices (2021)
  • Author(s): K. Sato, S. Miyamoto, and N. Usami
  • Organizer: 2021 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (IWDTF 2021)
  • Int'l Joint Research