Nonequilibrium surface reactions of plasma-assisted atomic layer processes

• Project/Area Number: 21H04453
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Medium-sized Section 14:Plasma science and related fields
• Research Institution: Osaka University
• Principal Investigator: 浜口 智志 大阪大学, 大学院工学研究科, 教授 (60301826)
• Project Period (FY): 2021-04-05 – 2025-03-31
• Project Status: Granted (Fiscal Year 2024)
• Budget Amount: ¥42,120,000 (Direct Cost: ¥32,400,000、Indirect Cost: ¥9,720,000); Fiscal Year 2024: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000); Fiscal Year 2023: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000); Fiscal Year 2022: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000); Fiscal Year 2021: ¥13,390,000 (Direct Cost: ¥10,300,000、Indirect Cost: ¥3,090,000)
• Keywords: 半導体プロセス / 原子層エッチング ALE / 原子層堆積 ALD / プラズマプロセス / プラズマ表面相互作用 / 原子層エッチング ALE / プラズマ・プロセス / 表面プロセス工学

Outline of Research at the Start

プラズマ・プロセスを多用する最先端半導体製造では、現在、数ナノメートルの３次元構造体を、原子レベルの精度で、表面を損傷せず加工するためのプロセス開発が求められている。本研究は、プラズマ物質相互作用の学術的理解を飛躍的に高め、表面反応素過程からプロセス装置まで統合して理論的・実験的に解析することで、ALPを原子層レベルで理解し、かつ、制御可能とすることを目的とする。本研究の成果は、プラズマ・プロセスの枠を超え、固体表面反応プロセス全般に展開可能であり、一般の反応プロセスを表面原子レベルで制御可能とする「表面プロセス工学」という新しい学術分野の確立に貢献する。

Outline of Annual Research Achievements

プラズマ・プロセスを多用する最先端半導体製造では、数ナノメートルの三次元構造体を、原子レベルの精度で、表面を損傷せず加工する必要がある。本研究は、プラズマ表面相互作用の学術的理解を飛躍的に高め、表面反応素過程からプロセス装置まで統合して理論的・実験的に解析することで、原子層精度の加工プロセス（原子層プロセス：ALP）を量子論レベルで理解し、かつ、制御可能とすることを目的とする。手法としては、複雑なプラズマ・プロセスを、個別の素過程に分解して、各種ビーム実験と数値シミュレーションを組み合わせて解析する。本年度は、半導体デバイスに多用されるトレンチ（溝）構造を例にとり、微細で高アスペクト比のトレンチに対して、プラズマ支援原子層堆積（PEALD）プロセスを用いて、一様なSiN膜を成膜し、トレンチをSiNで完全に埋めるプロセスにおけるシーム形成の機構を明らかにした。トレンチの底、および、両側の内壁にSiN膜が形成される際には、最後に、両側の内壁に堆積したSiN膜の表面が互いに接近し、最後に密着する。この密着面がシームとなる。密着直前には、数ナノメートル、あるいは、それ以下の幅しかない空隙を通して、ALDの吸着ステップ（半サイクル）で、ジクロロシラン(SiCl2H2)等のクロロシラン系分子が堆積用プリカーサとして表面に到着し、Si原子が表面に堆積する。また、ALDの脱離ステップでは、窒素・水素あるはアンモニア（NH3）プラズマから生成された各種のラジカルや分子が、この空隙を通して輸送され、表面を窒化する同時に、残余の塩素を脱離させる。この場合、狭い間隙を輸送される気相種は、表面と頻繁に衝突するため、輸送は拡散的となり、表面との化学反応も無視できない。本研究では、特に、脱離プロセスにおける塩素原子の除去機構、分子動力学シミュレーションを用いて、明らかにした。

Current Status of Research Progress

1: Research has progressed more than it was originally planned.

Reason

SiNのPEALDプロセスは、SiH2Cl2やSiCl2(CH3)2等のシリコンおよび塩素を含んだ前駆体（プリカーサ）ガス曝露によるSiの堆積ステップと、NH3もしくはN2+H2混合ガスから生成したプラズマ照射による塩素除去および窒化ステップの組み合わせで、プロセスの1サイクルを構成し、このサイクルを多数繰り返して行うことにより、所望の厚さのSiN薄膜を、広い面積で一様に、原子スケールの膜厚精度で成膜する。PEALDによるSiN膜堆積において、窒化度の違いや塩素や炭素等の不純物の残留が薄膜の特性に影響を与える可能性があるため、プラズマや反応性気体とプロセス表面との反応の深い理解が、SiNのPE-ALDの効率化やプロセス制御に極めて重要である。昨年までの研究で、脱離ステップにおけるHの存在が、吸着ステップの自己停止に必要不可欠なCl原子の除去に必要不可欠であることが知られたが、深いトレンチ構造等へのSiN埋め込みプロセスでは、狭まりゆく空間をHラジカルが、表面と反応せずに溝の底まで輸送される可能性は極めて低い。本研究では、HラジカルがH2分子を形成しつつも、吸着しているCl原子と反応して、揮発性のHClを形成し、それが、拡散現象を通して、除去される機構が明らかにされ、その拡散係数や拡散の活性化エネルギーも決定された。こうした輸送と反応の物理機構は、当初予想していなかったものであり、本物理機構の理解が、本分野の今後の発展に大きく貢献することが予想される。

Strategy for Future Research Activity

これまでの研究では、高アスペクト比のトレンチ構造に対して、SiN PEALDプロセスによりSiNを埋め込むプロセスのシーム形成機構を検討し、塩素除去ステップにおける数ナノメートル以下の幅をもつ空間の気相分子・ラジカル輸送機構と表面反応機構を明らかにした。今後は、その前段階である、シリコン吸着ステップにおける、数ナノメートル以下の幅をもつ空間の気相分子・ラジカル輸送機構と表面反応機構を明らかにする。特に、SiN表面におけるジクロロシランSiCl2H2やH2分子等、揮発性の高い分子と表面の相互作用を、原子レベルで明らかにする。

Research Products

• [Int'l Joint Research] Wigner Research Centre for Physics(ハンガリー)
• [Int'l Joint Research] Rhur University Bochum/University of Kiel/INP Greifswald(ドイツ)
• [Int'l Joint Research] Aix Marseille University/University of Orleans(フランス)
• [Int'l Joint Research] Masaryk University/Central European Institute of Technology/Brno University of Technology(チェコ)
• [Int'l Joint Research] Comenius University(スロバキア)
• [Int'l Joint Research]
• [Int'l Joint Research] wigner Research Centre for Physics(ハンガリー)
• [Int'l Joint Research] Masaryk University/Central European Institute of Technology/Brno University of Technology(チェコ)
• [Int'l Joint Research] Aix Marseille University(フランス)
• [Int'l Joint Research] Ruhr University Bochum/INP Greifswald/Karlsruhe Institute of Technologies(ドイツ)
• [Int'l Joint Research] Comenius University(スロバキア)
• [Int'l Joint Research]
• [Int'l Joint Research] wigner Research Centre for Physics(ハンガリー)
• [Int'l Joint Research] Masaryk University/Brno University of Technology/Central European Institute of Technology(チェコ)
• [Int'l Joint Research] Aix Marseille University(フランス)
• [Int'l Joint Research] Ruhr University Bochum/INP Greifswald(ドイツ)
• [Int'l Joint Research] Comenius University(スロバキア)
• [Int'l Joint Research]
• [Journal Article] Surface chemical reactions of etch stop prevention in plasma-enhanced atomic layer etching of silicon nitride (2024)
  • Author(s): Tercero Jomar U.、Hirata Akiko、Isobe Michiro、Karahashi Kazuhiro、Fukasawa Masanaga、Hamaguchi Satoshi
  • Journal Title: Surface and Coatings Technology Volume: 477 Pages: 130365-130365
  • DOI: 10.1016/j.surfcoat.2023.130365
  • Peer Reviewed
• [Journal Article] First-principles simulation of optical emission spectra for low-pressure argon plasmas and its experimental validation (2023)
  • Author(s): Jenina Arellano Fatima、Gyulai Morton、Donko Zoltan、Hartmann Peter、Tsankov Tsanko V、Czarnetzki Uwe、Hamaguchi Satoshi
  • Journal Title: Plasma Sources Science and Technology Volume: 32 Issue: 12 Pages: 125007-125007
  • DOI: 10.1088/1361-6595/ad0ede
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Molecular dynamics simulation of amine formation in plasma-enhanced chemical vapor deposition with hydrocarbon and amino radicals (2023)
  • Author(s): Harumningtyas Anjar Anggraini、Ito Tomoko、Isobe Michiro、Zajickova Lenka、Hamaguchi Satoshi
  • Journal Title: Journal of Vacuum Science and Technology A Volume: 41 Issue: 6
  • DOI: 10.1116/6.0002978
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Global numerical simulation of chemical reactions in phosphate-buffered saline (PBS) exposed to atmospheric-pressure plasmas (2023)
  • Author(s): Alfianto Enggar、Ikuse Kazumasa、Hamaguchi Satoshi
  • Journal Title: Plasma Sources Science and Technology Volume: 32 Issue: 8 Pages: 085014-085014
  • DOI: 10.1088/1361-6595/aceeae
  • Peer Reviewed
• [Journal Article] 2022 Review of Data-Driven Plasma Science (2023)
  • Author(s): Anirudh Rushil、Archibald Rick、Asif M. Salman、Becker Markus M.、Benkadda Sadruddin、Hamaguchi Satoshi、Yamada Hiroshi、Yokoyama Tatsuya et al.
  • Journal Title: IEEE Transactions on Plasma Science Volume: 51 Issue: 7 Pages: 1750-1838
  • DOI: 10.1109/tps.2023.3268170
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] High-throughput SiN ALE: surface reaction and ion-induced damage generation mechanisms (2023)
  • Author(s): Hirata Akiko、Fukasawa Masanaga、Tercero Jomar Unico、Kugimiya Katsuhisa、Hagimoto Yoshiya、Karahashi Kazuhiro、Hamaguchi Satoshi、Iwamoto Hayato
  • Journal Title: Japanese Journal of Applied Physics Volume: 62 Issue: SI Pages: SI1015-SI1015
  • DOI: 10.35848/1347-4065/accde6
  • Peer Reviewed / Open Access
• [Journal Article] Spectroscopic analysis improvement using convolutional neural networks (2023)
  • Author(s): Saura N、Garrido D、Benkadda S、Ibano K、Ueda Y、Hamaguchi S
  • Journal Title: Journal of Physics D: Applied Physics Volume: 56 Issue: 35 Pages: 354001-354001
  • DOI: 10.1088/1361-6463/acd261
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Foundations of machine learning for low-temperature plasmas: methods and case studies (2023)
  • Author(s): Bonzanini Angelo D、Shao Ketong、Graves David B、Hamaguchi Satoshi、Mesbah Ali
  • Journal Title: Plasma Sources Science and Technology Volume: 32 Issue: 2 Pages: 024003-024003
  • DOI: 10.1088/1361-6595/acb28c
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Inert-gas ion scattering at grazing incidence on smooth and rough Si and SiO2 surfaces (2023)
  • Author(s): Cagomoc Charisse Marie D.、Isobe Michiro、Hudson Eric A.、Hamaguchi Satoshi
  • Journal Title: Journal of Vacuum Science and Technology A Volume: 41 Issue: 2 Pages: 023003-023003
  • DOI: 10.1116/6.0002381
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Molecular dynamics study of SiO2 nanohole etching by fluorocarbon ions (2023)
  • Author(s): Cagomoc Charisse Marie D.、Isobe Michiro、Hamaguchi Satoshi
  • Journal Title: Journal of Vacuum Science and Technology A Volume: 41 Issue: 2 Pages: 023001-023001
  • DOI: 10.1116/6.0002380
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] The 2021 release of the Quantemol database (QDB) of plasma chemistries and reactions (2022)
  • Author(s): Tennyson Jonathan、Mohr Sebastian、Hanicinec M、Dzarasova Anna、Smith Carrick、Waddington Sarah、Liu Bingqing、Alves Luis L、Bartschat Klaus、Bogaerts Annemie、Engelmann Sebastian U、Gans Timo、Gibson Andrew R、Hamaguchi Satoshi、
  • Journal Title: Plasma Sources Science and Technology Volume: 31 Issue: 9 Pages: 095020-095020
  • DOI: 10.1088/1361-6595/ac907e
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Molecular dynamics simulation of oxide-nitride bilayer etching with energetic fluorocarbon ions (2022)
  • Author(s): Cagomoc Charisse Marie D.、Isobe Michiro、Hudson Eric A.、Hamaguchi Satoshi
  • Journal Title: Journal of Vacuum Science and Technology A Volume: 40 Issue: 6 Pages: 063006-063006
  • DOI: 10.1116/6.0002182
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Foundations of atomic-level plasma processing in nanoelectronics (2022)
  • Author(s): Arts Karsten、Hamaguchi Satoshi、Ito Tomoko、Karahashi Kazuhiro、Knoops Harm C M、Mackus Adriaan J M、(Erwin) Kessels Wilhelmus M M
  • Journal Title: Plasma Sources Science and Technology Volume: 31 Issue: 10 Pages: 103002-103002
  • DOI: 10.1088/1361-6595/ac95bc
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] The 2022 Plasma Roadmap: low temperature plasma science and technology (2022)
  • Author(s): Adamovich I,Agarwal S,Ahedo E,Alves LL,Baalrud S,Babaeva N,Bogaerts A,Bourdon A,Bruggeman PJ,Canal C,Choi E H,Coulombe S,Donko Z,Graves DB,Hamaguchi S,Hegemann D,Hori M et al
  • Journal Title: Journal of Physics D: Applied Physics Volume: 55 Issue: 37 Pages: 373001-373001
  • DOI: 10.1088/1361-6463/ac5e1c
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies (2022)
  • Author(s): Kambara Makoto、Kawaguchi Satoru、Lee Hae June、Ikuse Kazumasa、Hamaguchi Satoshi、Ohmori Takeshi、Ishikawa Kenji
  • Journal Title: Japanese Journal of Applied Physics Volume: 62 Issue: SA Pages: SA0803-SA0803
  • DOI: 10.35848/1347-4065/ac9189
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Molecular dynamics simulation of Si trench etching with SiO2 hard masks (2022)
  • Author(s): Mauchamp Nicolas A.、Hamaguchi Satoshi
  • Journal Title: Journal of Vacuum Science and Technology A Volume: 40 Issue: 5 Pages: 053004-053004
  • DOI: 10.1116/6.0002003
  • Peer Reviewed
• [Journal Article] Improving penalized semi supervised nonnegative matrix factorization result’s confidence using deep residual learning approach in spectrum analysis (2022)
  • Author(s): Saura Nathaniel、Mastumoto Koh、Benkadda Sadruddin、Ibano Kenzo、Lee Heun Tae、Ueda Yoshio、Hamaguchi Satoshi
  • Journal Title: Proc. 2022 International Conference on Electrical, Computer and Energy Technologies (ICECET) Volume: 0 Pages: 1-6
  • DOI: 10.1109/icecet55527.2022.9873493
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Roles of the reaction boundary layer and long diffusion of stable reactive nitrogen species (RNS) in plasma-irradiated water as an oxidizing media - numerical simulation study (2022)
  • Author(s): Ikuse Kazumasa、Hamaguchi Satoshi
  • Journal Title: Japanese Journal of Applied Physics Volume: 61 Issue: 7 Pages: 076002-076002
  • DOI: 10.35848/1347-4065/ac7371
  • Peer Reviewed / Open Access
• [Journal Article] Low-energy ion irradiation effects on chlorine desorption in plasma-enhanced atomic layer deposition (PEALD) for silicon nitride (2022)
  • Author(s): Ito Tomoko、Kita Hidekazu、Karahashi Kazuhiro、Hamaguchi Satoshi
  • Journal Title: Japanese Journal of Applied Physics Volume: 61 Issue: SI Pages: SI1011-SI1011
  • DOI: 10.35848/1347-4065/ac629b
  • Peer Reviewed / Open Access
• [Journal Article] Five-step plasma-enhanced atomic layer etching of silicon nitride with a stable etched amount per cycle (2022)
  • Author(s): Hirata Akiko、Fukasawa Masanaga、Tercero Jomar U.、Kugimiya Katsuhisa、Hagimoto Yoshiya、Karahashi Kazuhiro、Hamaguchi Satoshi、Iwamoto Hayato
  • Journal Title: Japanese Journal of Applied Physics Volume: 61 Issue: 6 Pages: 066002-066002
  • DOI: 10.35848/1347-4065/ac61f6
  • Peer Reviewed
• [Journal Article] Structural and electrical characteristics of ion-induced Si damage during atomic layer etching (2022)
  • Author(s): Hirata Akiko、Fukasawa Masanaga、Kugimiya Katsuhisa、Karahashi Kazuhiro、Hamaguchi Satoshi、Hagimoto Yoshiya、Iwamoto Hayato
  • Journal Title: Japanese Journal of Applied Physics Volume: 61 Issue: SI Pages: SI1003-SI1003
  • DOI: 10.35848/1347-4065/ac6052
  • Peer Reviewed / Open Access
• [Journal Article] Self-sputtering of the Lennard-Jones crystal (2022)
  • Author(s): Mauchamp Nicolas A.、Ikuse Kazumasa、Isobe Michiro、Hamaguchi Satoshi
  • Journal Title: Physics of Plasmas Volume: 29 Issue: 2 Pages: 023507-023507
  • DOI: 10.1063/5.0077762
  • Peer Reviewed
• [Journal Article] Why are physical sputtering yields similar for incident ions with different masses??physical sputtering yields of the Lennard-Jones system (2022)
  • Author(s): Mauchamp Nicolas A、Hamaguchi Satoshi
  • Journal Title: Journal of Physics D: Applied Physics Volume: 55 Issue: 22 Pages: 225209-225209
  • DOI: 10.1088/1361-6463/ac57dc
  • Peer Reviewed / Open Access
• [Journal Article] Monitoring of nonthermal plasma degradation of phthalates by ion mobility spectrometry (2021)
  • Author(s): Moravsky Ladislav、Michalczuk Bartosz、Hrda Jana、Hamaguchi Satoshi、Matejcik Stefan
  • Journal Title: Plasma Processes and Polymers Volume: 18 Issue: 7 Pages: 2100032-2100032
  • DOI: 10.1002/ppap.202100032
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Surface damage formation during atomic layer etching of silicon with chlorine adsorption (2021)
  • Author(s): Tinacba Erin Joy Capdos、Isobe Michiro、Hamaguchi Satoshi
  • Journal Title: Journal of Vacuum Science & Technology A Volume: 39 Issue: 4 Pages: 042603-042603
  • DOI: 10.1116/6.0001117
  • Peer Reviewed
• [Journal Article] Evaluation of nickel self-sputtering yields by molecular-dynamics simulation (2021)
  • Author(s): Mauchamp Nicolas A.、Isobe Michiro、Hamaguchi Satoshi
  • Journal Title: Journal of Vacuum Science & Technology A Volume: 39 Issue: 4 Pages: 043005-043005
  • DOI: 10.1116/6.0000979
  • Peer Reviewed
• [Journal Article] Molecular dynamics simulation for reactive ion etching of Si and SiO2 by SF5+ ions (2021)
  • Author(s): Tinacba Erin Joy Capdos、Ito Tomoko、Karahashi Kazuhiro、Isobe Michiro、Hamaguchi Satoshi
  • Journal Title: Journal of Vacuum Science & Technology B Volume: 39 Issue: 4 Pages: 043203-043203
  • DOI: 10.1116/6.0001230
  • Peer Reviewed
• [Journal Article] Amine modification of calcium phosphate by low-pressure plasma for bone regeneration (2021)
  • Author(s): Kodama Joe, et al
  • Journal Title: Scientific Reports Volume: 11 Issue: 1
  • DOI: 10.1038/s41598-021-97460-8
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Erratum: “Formation and desorption of nickel hexafluoroacetylacetonate Ni(hfac)2 on a nickel oxide surface in atomic layer etching processes” [J. Vac. Sci. Technol. A 38, 052602 (2020)] (2021)
  • Author(s): Basher Abdulrahman H.、Krstic Marjan、Fink Karin、Ito Tomoko、Karahashi Kazuhiro、Wenzel Wolfgang、Hamaguchi Satoshi
  • Journal Title: Journal of Vacuum Science and Technology A Volume: 39 Issue: 5 Pages: 057001-057001
  • DOI: 10.1116/6.0001319
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Development of a DC-plasma source for surface functionalization by amino groups (2021)
  • Author(s): Harumningtyas Anjar Anggraini、Suprapto、Suprihatin Hari、Aziz Ihwanul、Andriyanti Wiwien、Sujitno Tjipto、Purwadi Agus、Hamaguchi Satoshi
  • Journal Title: AIP Conference Proceedings Volume: 11 Pages: 020018-020018
  • DOI: 10.1063/5.0066318
  • Peer Reviewed
• [Journal Article] 機械学習を利用したプラズマ材料プロセッシング (2021)
  • Author(s): 幾世和将、 浜口智志
  • Journal Title: プラズマエレクトロニクス分科会会報 Volume: 74 Pages: 3-7
  • Peer Reviewed
• [Journal Article] 難エッチング材料に対する原子層エッチング反応解析 (2021)
  • Author(s): 伊藤智子，唐橋一浩，浜口智志
  • Journal Title: プラズマ・核融合学会誌 Volume: 97 Pages: 522-527
• [Journal Article] エッチング表面反応の実験的理論的アプローチ (2021)
  • Author(s): 唐橋 一浩, 伊藤 智子, 浜口 智志
  • Journal Title: 応用物理学会誌「応用物理」 Volume: 91 Pages: 164-168
  • NAID: 130008165355
• [Presentation] Surface analyses of β-diketone-adsorbed transition metal materials in atomic layer etching (ALE) processes (2023)
  • Author(s): Tomoko Ito
  • Organizer: 14th EU-Japan Joint Symposium on Plasma Processing
  • Int'l Joint Research / Invited
• [Presentation] Monolayer Graphene, a perfect hub for the study of out-of-equilibrium phenomena in plasma-surface interactions (2023)
  • Author(s): Pierre Vinchon
  • Organizer: 14th EU-Japan Joint Symposium on Plasma Processing
  • Int'l Joint Research / Invited
• [Presentation] Atomic Layer Processing toward Sub-nm-node Semiconductor Device Manufacturing (2023)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 21st International Nanotech Symposium and Exhibition
  • Int'l Joint Research / Invited
• [Presentation] Surface Reaction Mechanisms of Thermal and Plasma-Enhanced Atomic Layer Etching (ALE) Processes (2023)
  • Author(s): Satoshi Hamaguchi
  • Organizer: AVS 23rd International Conference on Atomic Layer Deposition
  • Int'l Joint Research / Invited
• [Presentation] Plasma-surface interactions of atomic-layer processing toward sub-nm node semiconductor devices (2023)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 3rd Plasma Thin Film International Union Meeting (PLATHINIUM)
  • Int'l Joint Research / Invited
• [Presentation] Role of Machine Learning (2023)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 76th Annual Gaseous Electronics Conference
  • Int'l Joint Research / Invited
• [Presentation] Plasma-enhanced atomic layer processing for semiconductor processing (2023)
  • Author(s): Satoshi Hamaguchi
  • Organizer: Global Plasma Forum (GPF) in Aomori
  • Int'l Joint Research / Invited
• [Presentation] Monolayer Graphene, a perfect hub for the study of out-of-equilibrium phenomena in plasma-surface interactions (2023)
  • Author(s): Pierre Vinchon
  • Organizer: Global Plasma Forum (GPF) in Aomori
  • Int'l Joint Research / Invited
• [Presentation] How Can Machine Learning Help Process Development? (2023)
  • Author(s): Satoshi Hamaguchi
  • Organizer: AVS 69th International Symposium & Exhibition
  • Int'l Joint Research / Invited
• [Presentation] Plasma surface interactions for atomic layer processes (2023)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 44th International Symposium on Dry Process (DPS 2023),
  • Int'l Joint Research / Invited
• [Presentation] Machine learning application to plasma modelling (2023)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 97th IUVSTA Workshop on Plasma-Assisted Conversion of Gases for a Sustainable Future
  • Int'l Joint Research / Invited
• [Presentation] Plasma-surface interactions examined with monolayer graphene: case study of very-low-energy ions (2023)
  • Author(s): Pierre Vinchon
  • Organizer: The 5th International Symposium of the Vacuum Society of the Philippines (ISVSP 2024),
  • Int'l Joint Research / Invited
• [Presentation] プラズマによる超微細加工：原子層プロセス (2023)
  • Author(s): 浜口智志
  • Organizer: 兵庫県マテリアルズ・インフォマティクス講演会：放射光による微細加工（半導体）
  • Invited
• [Presentation] サブナノメートル半導体デバイス製造にむけたプラズマプロセス技術 (2023)
  • Author(s): 浜口智志
  • Organizer: VACUUM2023真空展
  • Invited
• [Presentation] Plasma process control with machine learning (2022)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 4th International Symposium of the Vacuum Society of the Phillippines (ISVSP 2022)
  • Int'l Joint Research / Invited
• [Presentation] Surface Reaction Mechanisms by Metal-Organic Compound Formations in Atomic Layer Etching Processes (2022)
  • Author(s): Tomoko Ito
  • Organizer: , 22nd International Conference on Atomic Layer Deposition (ALD 2022) featuring the 9th International Atomic Layer Etching Workshop
  • Int'l Joint Research / Invited
• [Presentation] Plasma Processing; From Fundamentals to Atomic Layer Processes (2022)
  • Author(s): Satoshi Hamaguchi
  • Organizer: The 22nd International Vacuum Congress (IVC-22)
  • Int'l Joint Research / Invited
• [Presentation] Effects of Low-Energy Ion Injection in Atomic Layer Processes,” T. Ito, K. Karahashi and, S. Hamaguchi (2022)
  • Author(s): Tomoko Ito
  • Organizer: 14th International Symposium on Atomic Level Characterizations for New Materials and Devices '22
  • Int'l Joint Research / Invited
• [Presentation] Atomic Layer Etching Reactions by Metal-organic Compound Formati (2022)
  • Author(s): Tomoko Ito
  • Organizer: International Workshop on Multidisciplinary Research (TVC2022)
  • Int'l Joint Research / Invited
• [Presentation] Dry Etching Processes; from Fundamentals to Latest Applications (2022)
  • Author(s): Satoshi Hamaguchi
  • Organizer: Advanced Metallization Conference 2022, 31st Asian Session (ADMETA Plus 2022)
  • Int'l Joint Research / Invited
• [Presentation] Introduction to data science applied to plasma science and technologies (2022)
  • Author(s): Satoshi Hamaguchi
  • Organizer: Le Stiudium Conference, On-line Meeting on Artificial Intelligence for Plasma Science
  • Int'l Joint Research / Invited
• [Presentation] Atomic-level control of plasma processing toward sub-nm node technologies (2022)
  • Author(s): Satoshi Hamaguchi
  • Organizer: International Symposium on Semiconductor Manufacturing
  • Int'l Joint Research / Invited
• [Presentation] Machine-learning based analyses of plasma processing (2022)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2022)
  • Int'l Joint Research / Invited
• [Presentation] サブナノメータノード半導体デバイス製造をめざしたプラズマプロセスの理解 (2022)
  • Author(s): 浜口智志
  • Organizer: 第39回プラズマプロセシング研究会/第34回プラズマ材料科学シンポジウム
  • Invited
• [Presentation] 原子層エッチングにおける表面反応 (2022)
  • Author(s): 伊藤智子
  • Organizer: 日本学術振興会R025委員会先進薄膜界面機能創成 第7回研究会
  • Invited
• [Presentation] Amine formation on the surface of porous calcium-phosphate artificial bone by low-pressure pulsed plasma polymer deposition (2021)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 8th International Conference on Plasma Medicine/10th International Symposium on Plasma Bioscience (August 3-6, 2021, Online Conference)
  • Int'l Joint Research / Invited
• [Presentation] Plasma processing challenges in the era of sub-nanometer-node semiconductor devices (2021)
  • Author(s): Satoshi Hamaguchi
  • Organizer: The International Union for Vacuum Science, Technique and Applications (IUVSTA) webinar series
  • Int'l Joint Research / Invited
• [Presentation] Understanding of plasma surface interaction - from the point of view of quantum chemistry and plasma physics (2021)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 74th Annual Gaseous Electronics Conference (GEC) (October 4 - 8, 2021, online), Foundation Talk,
  • Int'l Joint Research / Invited
• [Presentation] Molecular dynamics study on damage formation in atomic layer etching of Si with halogen radicals (2021)
  • Author(s): Erin Joy C. Tinacba
  • Organizer: American Vacuum Society (AVS) 67th Virtual Symposium
  • Int'l Joint Research / Invited
• [Presentation] Plasma-surface interactions of atomic layer etching (2021)
  • Author(s): Satoshi Hamaguchi
  • Organizer: International Workshop on Multidisciplinary Research/ Taiwan Vacuum Society (TVS)-2021 Annual Symposium)
  • Int'l Joint Research / Invited
• [Presentation] Mechanisms of Atomic Layer Etching by Metal-Organic Complex Formation (2021)
  • Author(s): Tomoko Ito
  • Organizer: The 30th International Toki Conference on Plasma and Fusion Research
  • Int'l Joint Research / Invited
• [Presentation] プラズマと表面の相互作用 (2021)
  • Author(s): 浜口智志
  • Organizer: 令和３年度日本表面真空学会九州支部学術講演会「新奇な薄膜・表面現象とその応用の最前線」
  • Invited
• [Presentation] データ駆動プラズマ科学と半導体プロセス (2021)
  • Author(s): 浜口智志
  • Organizer: (公社）日本表面真空学会SP部会 第167回定例研究報告会 （2021年6月24日（木） オンライン）
  • Invited
• [Presentation] プラズマ技術による骨再生バイオマテリアルの開発 (2021)
  • Author(s): 海渡貴司
  • Organizer: 日本学術振興会（JSPS）プラズマ材料科学第１５３委員会 第１５２回研究会「死滅と再生を制御するプラズマ技術」
  • Invited
• [Presentation] サブnmノード時代のプロセス・イノベーションを支える基礎科学 (2021)
  • Author(s): 浜口智志
  • Organizer: 東京エレクトロン（株） セミナー
  • Invited
• [Presentation] プラズマ表面相互作用研究の新たな展開 (2021)
  • Author(s): 浜口智志
  • Organizer: 第37回 九州・山口プラズマ研究会
  • Invited
• [Presentation] ビーム実験によるプラズマ表面反応の評価 (2021)
  • Author(s): 唐橋一浩
  • Organizer: 日本学術振興会プラズマ材料科学第153委員会 第153回研究会「プラズマプロセスにおける表面科学を理解する」
  • Invited
• [Presentation] 原子層エッチング(ALE)における表面反応 (2021)
  • Author(s): 唐橋一浩
  • Organizer: 第78回表面技術アカデミック研究会討論会「半導体プロセスにおける原子層スケールの先端表面処理技術」表面技術協会
  • Invited
• [Book] 半導体製造におけるウェット／ドライエッチング技術 (2022)
  • Author(s): 服部 毅、浜口智志、唐橋一浩 他
  • Total Pages: 300
  • Publisher: (株)R&D支援センター
• [Remarks] Hamaguchi Laboratory
  • URL: https://www-camt.eng.osaka-u.ac.jp/hamaguchi/
• [Remarks] Hamaguchi Laboratory
  • URL: http://www.camt.eng.osaka-u.ac.jp/hamaguchi/
• [Patent(Industrial Property Rights)] Etching method for oxide semiconductor film (2021)
  • Inventor(s): Satoshi Hamaguchi et al.
  • Industrial Property Rights Holder: Satoshi Hamaguchi et al.
  • Industrial Property Rights Type: 特許
  • Filing Date: 2021
  • Acquisition Date: 2022
  • Overseas
• [Patent(Industrial Property Rights)] 人工骨、及び人工骨の製造方法 (2021)
  • Inventor(s): 浜口 智志、出口 智子、他
  • Industrial Property Rights Holder: 浜口 智志、出口 智子、他
  • Industrial Property Rights Type: 特許
  • Filing Date: 2021
  • Acquisition Date: 2022
• [Funded Workshop] 13th EU-Japan Joint Symposium on Plasma Processing (2023)
• [Funded Workshop] 5th Atomic Layer Process (ALP) Workshop (2023)
• [Funded Workshop] 2nd Workshop on Artificial Intelligence in Plasma Science, Satellite Workshop of EU-Japan Joint Symposium on Plasma Processing (2022)
• [Funded Workshop] PiAI Seminar Series (2022)
• [Funded Workshop] 1st Workshop on Artificial Intelligence in Plasma Science, Satellite Workshop of EU-Japan Joint Symposium on Plasma Processing (2021)
• [Funded Workshop] PiAI Seminar Series (2021)
• [Funded Workshop] RUB-Japan Workshop: Bridging the Pandemic: Reigniting Cooperation on Plasma Research (2021)