| Budget Amount *help |
¥42,640,000 (Direct Cost: ¥32,800,000、Indirect Cost: ¥9,840,000)
Fiscal Year 2023: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2022: ¥15,730,000 (Direct Cost: ¥12,100,000、Indirect Cost: ¥3,630,000)
Fiscal Year 2021: ¥19,240,000 (Direct Cost: ¥14,800,000、Indirect Cost: ¥4,440,000)
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| Outline of Final Research Achievements |
First-principles calculations and experimental mechanical tests were performed for II-VI group and III-V group compound semiconductors, in order to clarify a physical origin of their photo-plastic effect. It was found that glide-dislocation cores of II-VI group semiconductors have localized electrostatic fields and can interact with excess electrons and holes excited by external light. Moreover, the glide dislocations underwent atomic reconstruction at their cores due to excess carriers. Such reconstructed cores may result in reduced mobility of glide dislocations, which should result in hardening of the systems under external light. Experimental mechanical tests for ZnTe supported this argument. In contrast, glide dislocations in GaP were found to undergo structural transformation from reconstructed to unreconstructed structure in the presence of excess carriers. It can be expected that GaP crystals show softening under light illumination unlike II-VI group semiconductors.
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