| Project/Area Number |
21J11028
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Single-year Grants |
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| Section | 国内 |
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| Review Section |
Basic Section 18020:Manufacturing and production engineering-related
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| Research Institution | Osaka University |
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Principal Investigator |
LIU NIAN 大阪大学, 工学系研究科, 特別研究員(DC2)
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| Project Period (FY) |
2021-04-28 – 2023-03-31
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| Project Status |
Declined (Fiscal Year 2022)
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| Budget Amount *help |
¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2022: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2021: ¥800,000 (Direct Cost: ¥800,000)
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| Keywords | PAP / Single crystal diamond / Damage-free / Material removal rate / Isotropic removal / Anisotropic removal / Cathodoluminescence / Raman spectroscopy |
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| Outline of Research at the Start |
Single crystal diamond (SCD) as an ideal material for the fabrication of electronic devices is difficult to process due to its high hardness and chemical inert. In this study, I will develop plasma assisted polishing (PAP) to realize the high-efficiency, high-quality and low-damage polishing of SCD.
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| Outline of Annual Research Achievements |
A single crystal diamond (SCD) substrate is processed by plasma-assisted polishing (PAP) using four types of polishing plates, the quartz glass is the most suitable to obtain an atomically smooth surface with high material removal rate.
As the polishing pressure applied to the SCD substrate varied, the isotropic chemical removal action was dominant when the PAP was performed at low polishing pressures such as 62.5 kPa, whereas the anisotropic mechanically induced removal action was dominant when the PAP was performed at high polishing pressures such as 350.0 kPa. In contrast, changing the sliding speed between the polishing plate and the SCD substrate did not affect the material removal mechanism of PAP.
PAP was damage-free when applied to the polishing of SCD substrate.
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| Research Progress Status |
翌年度、交付申請を辞退するため、記入しない。
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| Strategy for Future Research Activity |
翌年度、交付申請を辞退するため、記入しない。
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