Fabrication, characterization and application of GeSn core-shell nanowires
| Project/Area Number |
21J11537
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Single-year Grants |
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| Section | 国内 |
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| Review Section |
Basic Section 28020:Nanostructural physics-related
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| Research Institution | National Institute for Materials Science (2022)
University of Tsukuba (2021) |
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Principal Investigator |
孫 永烈 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 特別研究員(PD)
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| Project Period (FY) |
2021-04-28 – 2023-03-31
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| Project Status |
Completed (Fiscal Year 2022)
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| Budget Amount *help |
¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2022: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2021: ¥800,000 (Direct Cost: ¥800,000)
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| Keywords | Semiconductor / Nanowire / Hole gas / Core-shell / Germanium / nanowire / core-shell / germanium / nanoimprint lithography |
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| Outline of Research at the Start |
縦型ナノワイヤ構造トランジスタが、高集積化かつ高速なON／OFF切り替え等の利点を有していることで、次世代MOSFETとして、有力な候補である。また、GeSnは、従来のSiに比べ、高いキャリヤ移動度を有し、超高速トランジスタのチャンネル材料として注目されている。本研究の概要は、GeSnシェル層の垂直配列コアシェルナノワイヤアレイを作製し、Sn濃度、分布及び結晶性を評価すると共に、縦型GeSnナノワイヤMOSFETを開発し、その超高速動作と高い制御性を実証する。
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| Outline of Annual Research Achievements |
To fabricate vertical GeSn core-shell nanowire (NW) MOSFETs, i-Ge NWs and their core-shell heterostructures formed on heavily doped p-Si substrates using electron beam lithography (EBL) and the top-down etching (Bosch process) was investigated. The i-Ge layer deposition by chemical vapor deposition (CVD) was first investigated for optimizing thickness and crystallinity. Sets of single Ge NWs (for device fabrication) and Ge NW arrays (for characterization) with diameters ranging from 150 to 50 nm were fabricated using EBL and Bosch etching. Surface morphology, NW size, etching depth relative to pattern size, and etching conditions were investigated to obtain desirable structures. As a result of optimization, Ge NW arrays with smooth surfaces and uniform diameters in the length direction were successfully fabricated on Si substrates.
The core-shell heterostructure was then formed by CVD and the shell thickness, boron doping, and crystallinity were optimized. Raman scattering was used to evaluate the hole gas accumulation in the core relative to NW size. In addition, the core-shell interface, shell crystallinity, and elemental distribution were studied by transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) analysis. The results demonstrated a core-shell NW structure with sharp interfaces. Finally, the fabricated samples were sent to a collaborative research group for fabricating vertical core-shell NW MOSFETs. Some of the above results were presented at the conference, and we plan to compile the full results and publish them in a paper.
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| Research Progress Status |
令和4年度が最終年度であるため、記入しない。
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| Strategy for Future Research Activity |
令和4年度が最終年度であるため、記入しない。
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Report
(2 results)
Research Products
(4 results)
