| Project/Area Number |
21J11825
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Single-year Grants |
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| Section | 国内 |
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| Review Section |
Basic Section 21060:Electron device and electronic equipment-related
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| Research Institution | The University of Tokyo |
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Principal Investigator |
XING DI 東京大学, 工学系研究科, 特別研究員(DC2)
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| Project Period (FY) |
2021-04-28 – 2023-03-31
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| Project Status |
Completed (Fiscal Year 2022)
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| Budget Amount *help |
¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2022: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2021: ¥800,000 (Direct Cost: ¥800,000)
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| Keywords | Nanolaser / Perovskite / Single mode laser / Plasmonic lattice / Srface-emitting laser / CsPbBr3 nanocrystal / CsPbBr3 nanocrystals / single mode laser / plasmonic laser / plasmonic waveguide |
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| Outline of Research at the Start |
Lead halide perovskites are emerging as promising optical gain materials for laser devices due to their superior optical properties. This project aims to develop a strategy for an on-chip laser device with tunable single-wavelength emission by using perovskite.
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| Outline of Annual Research Achievements |
Perovskites CsPbX3 (X = Br, Cl, I) nanocrystals(NCs), gain great attention due to their outstanding optical performance. A major limitation of realizing CsPbX3-based lasers by top-down fabrication method is that they can be easily damaged by the solvents used in the lithography/lift-off process and during the dry etching process. Developing a way of the utilization of CsPbX3 NCs in the top-down fabrication method is highly desired. In this part, by simply combining CsPbBr3 NC film with a fine-designed structure, a CsPbBr3 NC thin film-based plasmonic lattice laser is demonstrated by using a pressure-assisted recrystallization process. Due to the low surface scattering loss and good interaction between gain media and Ag NPs, a low threshold single-mode lasing is achieved.
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| Research Progress Status |
令和4年度が最終年度であるため、記入しない。
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| Strategy for Future Research Activity |
令和4年度が最終年度であるため、記入しない。
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