| Project/Area Number |
21K04822
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 28020:Nanostructural physics-related
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
Spiesser Aurelie 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (90793513)
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| Project Period (FY) |
2021-04-01 – 2024-03-31
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| Project Status |
Completed (Fiscal Year 2023)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2023: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2022: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2021: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Keywords | silicon spintronics / magnetic tunnel contact / magnetoresistance / spin transport / tunnel barrier / thin channel / novel tunnel barrier / Si spintronics / Spin transport / Magnetic tunnel contacts / Thin channel / magnetic tunnel contacts / 2-dimensional channel |
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| Outline of Research at the Start |
The aim of this project is to develop devices that exploit the spin functionality in semiconductor technology, and to apply such devices to in-memory processing. In particular, we intend to achieve large magnetic signals in Si-based spin-devices by combining the use of an ultrathin Si channel and highly-quality magnetic contacts. By focusing on quasi-2D silicon, this project builds on the knowledge and material technology developed in Si spintronics over the last decade while connecting to the global interest in 2D materials for spintronics.
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| Outline of Final Research Achievements |
The goal is to develop silicon-based magnetoresistive devices that use the electron spin to process and store information. A major prerequisite for the operation of such devices is to obtain a sizeable two-terminal (2T) magnetoresistance (MR) in silicon. Thus, we investigated two complementary approaches: (1) we fabricated 2T devices with thin silicon channels and magnetic tunnel contacts, and (2) we investigated the growth of a novel tunnel barrier, BaO, to improve the spin injection efficiency. Whereas promising results were achieved by using thin Si channels, the growth of high-quality BaO tunnel barrier on Si proved to be very difficult.
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| Academic Significance and Societal Importance of the Research Achievements |
We investigated two novel approaches to increase the MR and determined optimum contact resistance for large MR in Si-based spin transport devices. The results are essential to design silicon devices with large MR and open exciting applications in areas ranging from electronics to quantum computing.
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