| Project/Area Number |
21K04839
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 28030:Nanomaterials-related
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
李 世勝 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主任研究員 (90812678)
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| Project Period (FY) |
2021-04-01 – 2024-03-31
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| Project Status |
Discontinued (Fiscal Year 2021)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2023: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2022: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2021: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | Inkjet printing / 2D materials / thin film transistors / 二次元ナノ材料科学 / 電子デバイス / 遷移金属カルコゲナイド / プリンテッド・エレクトロニクス / 化学気相成長 |
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| Outline of Research at the Start |
In this project, the applicant will utilize the Salt 2.0 synthesis technique and ink-jet printing technique to establish a world-leading and practical solution for high-performance 2D transition metal dichalcogenide (TMDC)-based high-performance printed electronics. Two key challenges will be investigated: 1) large-area wafer-scale and patterned growth of 2D TMDC monolayers, 2) the integration of 2D TMDCs in electronic devices and fulfil their excellent electrical and optoelectrical properties.
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| Outline of Annual Research Achievements |
インクジェット印刷を用いたTMDC化学気相成長にて、主に4つの成果を得た。1)インクジェット印刷したNa2MoO4ドットアレイの硫化により、2次元MoS2フレークをパターン化成長に成功した。2）この2次元MoS2フレークにAuインク印刷で端子を作製し、2次元MoS2フレーク薄膜トランジスタを形成した。3) 2次元MoS2薄膜フレークトランジスタは優れた電気特性が得られた。この要因は、低ショットキー障壁のAu-MoS2端子形成に起因すると推測される。4）高分解能走査型透過電子顕微鏡で、Au-MoS2端子界面の高密着性を確認した。インクジェット印刷は、高性能でフレキシブルな2次元材料ベースの薄膜エレクトロニクスのための非破壊材料成膜技術であることが得られた。
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| Current Status of Research Progress |
Current Status of Research Progress
1: Research has progressed more than it was originally planned.
Reason
All the main targets of this project have been achieved.
1.Inkjet printing technique has been employed to deposit many different ink materials, e.g., molten salt precursors for CVD growth of 2D materials, Au ink as contacts of 2D MoS2-based TFTs, ion-gel for gating, etc.
2. 2D MoS2-based TFTs have been fabricated on both rigid SiO2/Si substrates and flexible polyimide film.
3.Patterned growth of 2D MoS2 from inkjet-printed Na2MoO4 enables the future integration of 2D materials in functional electronic devices.
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| Strategy for Future Research Activity |
In this fiscal year, three main targets are proposed.
1. Patterned growth of well-aligned uniform-sized 2D transition metal dichalcogenides (TMDCs) on sapphire substrates with inkjet-printed molten salt precursors, e.g., Na2MoO4 and Na2WO4.
2. Integration of patterned 2D TMDCs for functional electrical/logic circuits using inkjet-printed Au as contacts and interconnects.
3. Demonstration inkjet-printed flexible 2D TMDC-based electronic devices on polyimide film and study the electrical properties of the TFTs under different deformation conditions.
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