| Project/Area Number |
21K04883
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 29020:Thin film/surface and interfacial physical properties-related
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| Research Institution | Kyushu University |
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Principal Investigator |
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| Project Period (FY) |
2021-04-01 – 2024-03-31
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| Project Status |
Completed (Fiscal Year 2023)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2023: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2022: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2021: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 2D materials / semiconductors / spin-polarization / Dirac materials / Xenes / Silicon carbide / 2D material / honeycomb lattice / nitride / silicon carbide / surface physics / spin-orbit interaction / SiC / spintronics |
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| Outline of Research at the Start |
The traditional electronic devices which are relying on electron transport are reaching their fundamental limits. Thus materials which may convey information via completely different means (ex. electron spin rather than charge) are in demand. Graphene-like 2D materials with honeycomb atomic structure, but consisting of heavy elements, like Pb, Sb, or Bi, are predicted to exhibit such a unique opportunity. Their synthesis however, have been unsuccessful until now. In our research we intend to utilize a unique substrate engineering approach which may favor the growth of such exotic 2D layers.
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| Outline of Final Research Achievements |
A single silicon nitride layer on SiC(0001) with honeycomb dangling bonds arrangement has been successfully grown and characterized by variety of surface science techniques. This nitride layer is an interesting material itself promising a lot of future applied and scientific potential. We have also carried out extensive computational study of possibility of honeycomb lattice 2D layers consisting of Sn, Sb, Pb, and Bi atoms (Xenes). Calculations confirms high probability to synthesize such layers on nitride buffer, confirming suggested significant prospects of such approach. The Xene layers made of heavy elements exhibit unique spin-polarized electronic structure. Experiments will be done in future continuing the progress achieved during this project period.
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| Academic Significance and Societal Importance of the Research Achievements |
The data obtained in during this research period has proven the concept of using nitride layer on SiC as a base for development of group IV and V Xene 2D materials. Further developments of the topic are expected in the future which may prove useful in the field of spintronics.
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